Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes

Sang Mook Kim, Jae Bum Kim, Junggeun Jhin, Jong Hyeob Baek, In Hwan Lee, Gun Young Jung

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.

Original languageEnglish
Pages (from-to)1911-1913
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number23
Publication statusPublished - 2008 Nov 1
Externally publishedYes


  • AlGaN
  • flip-chip
  • light-emitting diodes (LEDs)
  • patterned sapphire substrate (PSS)
  • silicon optical bench (SiOB)
  • ultraviolet (UV)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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