Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes

Sang Mook Kim; Jae Bum Kim; Junggeun Jhin; Jong Hyeob Baek; In Hwan Lee; Gun Young Jung

doi:10.1109/LPT.2008.2004700

Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes

Sang Mook Kim, Jae Bum Kim, Junggeun Jhin, Jong Hyeob Baek, In Hwan Lee, Gun Young Jung

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.

Original language	English
Pages (from-to)	1911-1913
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	23
DOIs	https://doi.org/10.1109/LPT.2008.2004700
Publication status	Published - 2008 Nov 1
Externally published	Yes

Keywords

AlGaN
flip-chip
light-emitting diodes (LEDs)
patterned sapphire substrate (PSS)
silicon optical bench (SiOB)
ultraviolet (UV)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2008.2004700

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@article{9864aa5d523f41e6b643bd865f50b2e9,

title = "Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes",

abstract = "We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.",

keywords = "AlGaN, flip-chip, light-emitting diodes (LEDs), patterned sapphire substrate (PSS), silicon optical bench (SiOB), ultraviolet (UV)",

author = "Kim, {Sang Mook} and Kim, {Jae Bum} and Junggeun Jhin and Baek, {Jong Hyeob} and Lee, {In Hwan} and Jung, {Gun Young}",

note = "Funding Information: Manuscript received February 14, 2008; revised July 09, 2008. First published August 22, 2008; current version published November 14, 2008. This work was supported by a Regional Innovation Project from the MOCIE, Korea.",

year = "2008",

month = nov,

day = "1",

doi = "10.1109/LPT.2008.2004700",

language = "English",

volume = "20",

pages = "1911--1913",

journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes

AU - Kim, Sang Mook

AU - Kim, Jae Bum

AU - Jhin, Junggeun

AU - Baek, Jong Hyeob

AU - Lee, In Hwan

AU - Jung, Gun Young

N1 - Funding Information: Manuscript received February 14, 2008; revised July 09, 2008. First published August 22, 2008; current version published November 14, 2008. This work was supported by a Regional Innovation Project from the MOCIE, Korea.

PY - 2008/11/1

Y1 - 2008/11/1

N2 - We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.

AB - We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.

KW - AlGaN

KW - flip-chip

KW - light-emitting diodes (LEDs)

KW - patterned sapphire substrate (PSS)

KW - silicon optical bench (SiOB)

KW - ultraviolet (UV)

UR - http://www.scopus.com/inward/record.url?scp=85008028646&partnerID=8YFLogxK

U2 - 10.1109/LPT.2008.2004700

DO - 10.1109/LPT.2008.2004700

M3 - Article

AN - SCOPUS:85008028646

SN - 1041-1135

VL - 20

SP - 1911

EP - 1913

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 23

ER -

Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes

Abstract

Keywords

ASJC Scopus subject areas

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