Optical and structural studies of phase separation in InGaN film grown by MOCVD

Yong Tae Moon; Dong Joon Kim; Keun Man Song; In Hwan Lee; Min Su Yi; Do Young Noh; Chel Jong Choi; Tae Yeon Seong; Seong Ju Park

doi:10.1002/(SICI)1521-3951(199911)216:1<167::AID-PSSB167>3.0.CO;2-G

Optical and structural studies of phase separation in InGaN film grown by MOCVD

Yong Tae Moon, Dong Joon Kim, Keun Man Song, In Hwan Lee, Min Su Yi, Do Young Noh, Chel Jong Choi, Tae Yeon Seong, Seong Ju Park

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.

Original language	English
Pages (from-to)	167-170
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	216
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<167::AID-PSSB167>3.0.CO;2-G
Publication status	Published - 1999 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/(SICI)1521-3951(199911)216:1<167::AID-PSSB167>3.0.CO;2-G

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@article{e0e3e2c656b0435b90041af779358070,

title = "Optical and structural studies of phase separation in InGaN film grown by MOCVD",

abstract = "We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.",

author = "Moon, {Yong Tae} and Kim, {Dong Joon} and Song, {Keun Man} and Lee, {In Hwan} and Yi, {Min Su} and Noh, {Do Young} and Choi, {Chel Jong} and Seong, {Tae Yeon} and Park, {Seong Ju}",

year = "1999",

month = nov,

doi = "10.1002/(SICI)1521-3951(199911)216:1<167::AID-PSSB167>3.0.CO;2-G",

language = "English",

volume = "216",

pages = "167--170",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - Optical and structural studies of phase separation in InGaN film grown by MOCVD

AU - Moon, Yong Tae

AU - Kim, Dong Joon

AU - Song, Keun Man

AU - Lee, In Hwan

AU - Yi, Min Su

AU - Noh, Do Young

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Park, Seong Ju

PY - 1999/11

Y1 - 1999/11

N2 - We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.

AB - We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.

UR - http://www.scopus.com/inward/record.url?scp=0033242889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033242889&partnerID=8YFLogxK

U2 - 10.1002/(SICI)1521-3951(199911)216:1<167::AID-PSSB167>3.0.CO;2-G

DO - 10.1002/(SICI)1521-3951(199911)216:1<167::AID-PSSB167>3.0.CO;2-G

M3 - Article

AN - SCOPUS:0033242889

SN - 0370-1972

VL - 216

SP - 167

EP - 170

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 1

ER -

Optical and structural studies of phase separation in InGaN film grown by MOCVD

Abstract

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