Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes

Kyoung Chan Kim; Ii Ki Han; Young Chae Yoo; Jung Il Lee; Yun Mo Sung; Tae Geun Kim

doi:10.1109/TNANO.2007.914978

Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes

Kyoung Chan Kim
, Ii Ki Han
, Young Chae Yoo
, Jung Il Lee
, Yun Mo Sung
, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report the optical characteristics and the linewidth enhancement factor (α-factor) of InAs/GaAs quantum dot (QD) laser diodes (LDs) with a 5-μm-wide stripe and 1-mm-long cavity. Continuous wave (CW) operation of the laser yielded a kink-free output power of 160 mW with an external efficiency of 0.35 W/A. The threshold current was 28 mA and the lasing occurred at 1286 nm, solely at the ground state (GS) up to a current of 345 mA, without switching to the excited state (ES). Then, to estimate the α-factor of the LDs, we investigated the differential gain and wavelength shift versus the current. The differential gain was 2.37 cm^-1/mA at 1286 nm, and the wavelength shift was 0.00046 nm/mA, which resulted in an α-factor of 0.057 at 1286 nm. The α-factor decreased with increasing wavelength. To the best of our knowledge, this is the lowest value of the α-factor that has been reported so far, indicating that our QD-LD has excellent beam quality under high-power operation due to the elimination of the filamentation.

Original language	English
Article number	4420097
Pages (from-to)	135-139
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	7
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2007.914978
Publication status	Published - 2008 Mar

Bibliographical note

Funding Information:
Manuscript received May 15, 2007; revised September 4, 2007. This work was supported in part by Korea Institute of Science and Technology under Research Program 2E19090, in part by Korea Foundation for International Cooperation of Science Technology (KICOS) under Korean Ministry of Science and Technology (MOST) Grant M60605000007, and in part by the MOST/Korean Science and Engineering Foundation (KOSEF) through the Quantum Photonic Science Research Center. The review of this paper was arranged by Associate Editor H. Misawa.

Keywords

Differential gain
Laser diodes (LDs)
Linewidth enhancement factor
Quantum dot (QD)

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2007.914978

Cite this

@article{03d861de5b684b499e2d9066ea57ea86,

title = "Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes",

abstract = "We report the optical characteristics and the linewidth enhancement factor (α-factor) of InAs/GaAs quantum dot (QD) laser diodes (LDs) with a 5-μm-wide stripe and 1-mm-long cavity. Continuous wave (CW) operation of the laser yielded a kink-free output power of 160 mW with an external efficiency of 0.35 W/A. The threshold current was 28 mA and the lasing occurred at 1286 nm, solely at the ground state (GS) up to a current of 345 mA, without switching to the excited state (ES). Then, to estimate the α-factor of the LDs, we investigated the differential gain and wavelength shift versus the current. The differential gain was 2.37 cm-1/mA at 1286 nm, and the wavelength shift was 0.00046 nm/mA, which resulted in an α-factor of 0.057 at 1286 nm. The α-factor decreased with increasing wavelength. To the best of our knowledge, this is the lowest value of the α-factor that has been reported so far, indicating that our QD-LD has excellent beam quality under high-power operation due to the elimination of the filamentation.",

keywords = "Differential gain, Laser diodes (LDs), Linewidth enhancement factor, Quantum dot (QD)",

author = "Kim, \{Kyoung Chan\} and Han, \{Ii Ki\} and Yoo, \{Young Chae\} and Lee, \{Jung Il\} and Sung, \{Yun Mo\} and Kim, \{Tae Geun\}",

note = "Funding Information: Manuscript received May 15, 2007; revised September 4, 2007. This work was supported in part by Korea Institute of Science and Technology under Research Program 2E19090, in part by Korea Foundation for International Cooperation of Science Technology (KICOS) under Korean Ministry of Science and Technology (MOST) Grant M60605000007, and in part by the MOST/Korean Science and Engineering Foundation (KOSEF) through the Quantum Photonic Science Research Center. The review of this paper was arranged by Associate Editor H. Misawa.",

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doi = "10.1109/TNANO.2007.914978",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes

AU - Kim, Kyoung Chan

AU - Han, Ii Ki

AU - Yoo, Young Chae

AU - Lee, Jung Il

AU - Sung, Yun Mo

AU - Kim, Tae Geun

N1 - Funding Information: Manuscript received May 15, 2007; revised September 4, 2007. This work was supported in part by Korea Institute of Science and Technology under Research Program 2E19090, in part by Korea Foundation for International Cooperation of Science Technology (KICOS) under Korean Ministry of Science and Technology (MOST) Grant M60605000007, and in part by the MOST/Korean Science and Engineering Foundation (KOSEF) through the Quantum Photonic Science Research Center. The review of this paper was arranged by Associate Editor H. Misawa.

PY - 2008/3

Y1 - 2008/3

N2 - We report the optical characteristics and the linewidth enhancement factor (α-factor) of InAs/GaAs quantum dot (QD) laser diodes (LDs) with a 5-μm-wide stripe and 1-mm-long cavity. Continuous wave (CW) operation of the laser yielded a kink-free output power of 160 mW with an external efficiency of 0.35 W/A. The threshold current was 28 mA and the lasing occurred at 1286 nm, solely at the ground state (GS) up to a current of 345 mA, without switching to the excited state (ES). Then, to estimate the α-factor of the LDs, we investigated the differential gain and wavelength shift versus the current. The differential gain was 2.37 cm-1/mA at 1286 nm, and the wavelength shift was 0.00046 nm/mA, which resulted in an α-factor of 0.057 at 1286 nm. The α-factor decreased with increasing wavelength. To the best of our knowledge, this is the lowest value of the α-factor that has been reported so far, indicating that our QD-LD has excellent beam quality under high-power operation due to the elimination of the filamentation.

AB - We report the optical characteristics and the linewidth enhancement factor (α-factor) of InAs/GaAs quantum dot (QD) laser diodes (LDs) with a 5-μm-wide stripe and 1-mm-long cavity. Continuous wave (CW) operation of the laser yielded a kink-free output power of 160 mW with an external efficiency of 0.35 W/A. The threshold current was 28 mA and the lasing occurred at 1286 nm, solely at the ground state (GS) up to a current of 345 mA, without switching to the excited state (ES). Then, to estimate the α-factor of the LDs, we investigated the differential gain and wavelength shift versus the current. The differential gain was 2.37 cm-1/mA at 1286 nm, and the wavelength shift was 0.00046 nm/mA, which resulted in an α-factor of 0.057 at 1286 nm. The α-factor decreased with increasing wavelength. To the best of our knowledge, this is the lowest value of the α-factor that has been reported so far, indicating that our QD-LD has excellent beam quality under high-power operation due to the elimination of the filamentation.

KW - Differential gain

KW - Laser diodes (LDs)

KW - Linewidth enhancement factor

KW - Quantum dot (QD)

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AN - SCOPUS:41149091106

SN - 1536-125X

VL - 7

SP - 135

EP - 139

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 2

M1 - 4420097

ER -

Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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