Optical characterization of BaSm2Ti4O12 thin films by spectroscopic ellipsometry

J. J. Yoon; S. Y. Hwang; Y. J. Kang; Y. D. Kim; Y. H. Jeong; S. Nahm

doi:10.1016/j.tsf.2009.01.102

Optical characterization of BaSm₂Ti₄O₁₂ thin films by spectroscopic ellipsometry

J. J. Yoon, S. Y. Hwang, Y. J. Kang, Y. D. Kim, Y. H. Jeong, S. Nahm

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We performed spectroscopic ellipsometric measurement to characterize BaSm₂Ti₄O₁₂ (BST) thin films grown on Pt/Ti/SiO₂/c-Si substrate by rf magnetron sputtering. The six BST films were prepared at various deposition temperatures and thermal annealing times. The resulting refractive indices and extinction coefficients of the BST films show only slight change by the deposition temperature but a significant change after thermal annealing, implying the importance of the post annealing process. The increase of the refractive index can be understood by the higher density of the BST films caused by the crystallization after annealing process.

Original language	English
Pages (from-to)	3923-3926
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.01.102
Publication status	Published - 2009 May 29

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-015-C00144).

Keywords

BaSmTiO
Dielectric function
Ellipsometry

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2009.01.102

Cite this

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title = "Optical characterization of BaSm2Ti4O12 thin films by spectroscopic ellipsometry",

abstract = "We performed spectroscopic ellipsometric measurement to characterize BaSm2Ti4O12 (BST) thin films grown on Pt/Ti/SiO2/c-Si substrate by rf magnetron sputtering. The six BST films were prepared at various deposition temperatures and thermal annealing times. The resulting refractive indices and extinction coefficients of the BST films show only slight change by the deposition temperature but a significant change after thermal annealing, implying the importance of the post annealing process. The increase of the refractive index can be understood by the higher density of the BST films caused by the crystallization after annealing process.",

keywords = "BaSmTiO, Dielectric function, Ellipsometry",

author = "Yoon, {J. J.} and Hwang, {S. Y.} and Kang, {Y. J.} and Kim, {Y. D.} and Jeong, {Y. H.} and S. Nahm",

note = "Funding Information: This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-015-C00144).",

year = "2009",

month = may,

day = "29",

doi = "10.1016/j.tsf.2009.01.102",

language = "English",

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journal = "Thin Solid Films",

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T1 - Optical characterization of BaSm2Ti4O12 thin films by spectroscopic ellipsometry

AU - Yoon, J. J.

AU - Hwang, S. Y.

AU - Kang, Y. J.

AU - Kim, Y. D.

AU - Jeong, Y. H.

AU - Nahm, S.

N1 - Funding Information: This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-015-C00144).

PY - 2009/5/29

Y1 - 2009/5/29

N2 - We performed spectroscopic ellipsometric measurement to characterize BaSm2Ti4O12 (BST) thin films grown on Pt/Ti/SiO2/c-Si substrate by rf magnetron sputtering. The six BST films were prepared at various deposition temperatures and thermal annealing times. The resulting refractive indices and extinction coefficients of the BST films show only slight change by the deposition temperature but a significant change after thermal annealing, implying the importance of the post annealing process. The increase of the refractive index can be understood by the higher density of the BST films caused by the crystallization after annealing process.

AB - We performed spectroscopic ellipsometric measurement to characterize BaSm2Ti4O12 (BST) thin films grown on Pt/Ti/SiO2/c-Si substrate by rf magnetron sputtering. The six BST films were prepared at various deposition temperatures and thermal annealing times. The resulting refractive indices and extinction coefficients of the BST films show only slight change by the deposition temperature but a significant change after thermal annealing, implying the importance of the post annealing process. The increase of the refractive index can be understood by the higher density of the BST films caused by the crystallization after annealing process.

KW - BaSmTiO

KW - Dielectric function

KW - Ellipsometry

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DO - 10.1016/j.tsf.2009.01.102

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