Abstract
The work function behavior of Zn-In-Sn-O (ZITO) films with various Zn and Sn contents were studied. The work function increased with addition of Zn content. With further increase of Zn contents, the work function gradually decreased. The work function behavior can be investigated by (1) Fermi level position relative the carrier concentration, (2) ionization potential by the surface dipole change. The Fermi level position related the carrier concentration was calculated by Drude parameters, and ionization potential measured by UPS. As results, we confirmed that the work function of ZITO may be linked to changes in ionization potential, not carrier concentration.
Original language | English |
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Pages (from-to) | 238-241 |
Number of pages | 4 |
Journal | Current Applied Physics |
Volume | 15 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2015 Mar |
Bibliographical note
Funding Information:This work was supported by the Human Resources Development Program (No. 20124030200120 ) and by the New & Renewable Energy Core Technology Program (No. 20133010011780 ) of the Korea Institute of Energy, Technology, Evaluation and Planning (KETEP) under the auspices of the Ministry of Trade, Industry and Energy, Republic of Korea . And this work was supported by the Korea University Grant .
Keywords
- Heterojunction solar cell
- ITO
- Sputter
- Work function
- Zn-In-Sn-O
ASJC Scopus subject areas
- General Materials Science
- General Physics and Astronomy