Optical properties and morphology of GaN grown by MBE on sapphire substrates

E. Tuncel; D. B. Oberman; H. Lee; T. Ueda; J. S. Harris

doi:10.1557/proc-423-681

Optical properties and morphology of GaN grown by MBE on sapphire substrates

E. Tuncel, D. B. Oberman, H. Lee, T. Ueda, J. S. Harris

Research output: Contribution to journal › Conference article › peer-review

Abstract

A series of GaN films grown by MBE on sapphire substrates with different nitrogen sources are characterized by optical transmission, spectroscopic ellipsometry (SE), photoluminescence (PL) and cross-sectional atomic force microscopy (AFM). The film thicknesses determined from broad spectral range transmission measurements and the AFM images are used in the analysis of the SE spectra. Interface roughnesses between the constituent layers, such as the substrate, the buffer and GaN layers are included in the modelling of the SE spectra and are also imaged by cross-sectional AFM. An effective medium type model is used for the modelling of interface and surface roughnesses in the SE spectra. The optical constants of the films in the band edge spectral range are determined in such a way as to simultaneously satisfy the transmission and the ellipsometry data.

Original language	English
Pages (from-to)	681-686
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	423
DOIs	https://doi.org/10.1557/proc-423-681
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 12

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{4adb7f3cea2e41e9b23fac96e7b48b3e,

title = "Optical properties and morphology of GaN grown by MBE on sapphire substrates",

abstract = "A series of GaN films grown by MBE on sapphire substrates with different nitrogen sources are characterized by optical transmission, spectroscopic ellipsometry (SE), photoluminescence (PL) and cross-sectional atomic force microscopy (AFM). The film thicknesses determined from broad spectral range transmission measurements and the AFM images are used in the analysis of the SE spectra. Interface roughnesses between the constituent layers, such as the substrate, the buffer and GaN layers are included in the modelling of the SE spectra and are also imaged by cross-sectional AFM. An effective medium type model is used for the modelling of interface and surface roughnesses in the SE spectra. The optical constants of the films in the band edge spectral range are determined in such a way as to simultaneously satisfy the transmission and the ellipsometry data.",

author = "E. Tuncel and Oberman, {D. B.} and H. Lee and T. Ueda and Harris, {J. S.}",

year = "1996",

doi = "10.1557/proc-423-681",

language = "English",

volume = "423",

pages = "681--686",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - Optical properties and morphology of GaN grown by MBE on sapphire substrates

AU - Tuncel, E.

AU - Oberman, D. B.

AU - Lee, H.

AU - Ueda, T.

AU - Harris, J. S.

PY - 1996

Y1 - 1996

N2 - A series of GaN films grown by MBE on sapphire substrates with different nitrogen sources are characterized by optical transmission, spectroscopic ellipsometry (SE), photoluminescence (PL) and cross-sectional atomic force microscopy (AFM). The film thicknesses determined from broad spectral range transmission measurements and the AFM images are used in the analysis of the SE spectra. Interface roughnesses between the constituent layers, such as the substrate, the buffer and GaN layers are included in the modelling of the SE spectra and are also imaged by cross-sectional AFM. An effective medium type model is used for the modelling of interface and surface roughnesses in the SE spectra. The optical constants of the films in the band edge spectral range are determined in such a way as to simultaneously satisfy the transmission and the ellipsometry data.

AB - A series of GaN films grown by MBE on sapphire substrates with different nitrogen sources are characterized by optical transmission, spectroscopic ellipsometry (SE), photoluminescence (PL) and cross-sectional atomic force microscopy (AFM). The film thicknesses determined from broad spectral range transmission measurements and the AFM images are used in the analysis of the SE spectra. Interface roughnesses between the constituent layers, such as the substrate, the buffer and GaN layers are included in the modelling of the SE spectra and are also imaged by cross-sectional AFM. An effective medium type model is used for the modelling of interface and surface roughnesses in the SE spectra. The optical constants of the films in the band edge spectral range are determined in such a way as to simultaneously satisfy the transmission and the ellipsometry data.

UR - http://www.scopus.com/inward/record.url?scp=0030387822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030387822&partnerID=8YFLogxK

U2 - 10.1557/proc-423-681

DO - 10.1557/proc-423-681

M3 - Conference article

AN - SCOPUS:0030387822

SN - 0272-9172

VL - 423

SP - 681

EP - 686

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Optical properties and morphology of GaN grown by MBE on sapphire substrates

Abstract

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