We report the effect of SiOx intermediate layers on the photoluminescence properties of europium-silicate thin films. Layer structures of Eu2O3/SiOx/Si (100) were deposited by using an rf-sputtering method and were annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of the SiOx layer: sputtering using a SiO2 target (Ar gas at a rate of 50 sccm) and reactive sputtering using a Si target (Ar gas at a rate of 45 sccm with O2 gas at a rate of 5 sccm). The photoluminescence peak at 430 nm was observed in the sample with a SiOx interlayer sputtered from a SiO2 target. In comparison, a PL peak at 570 nm was observed in the sample where SiOx layer had been deposited by reactive sputtering from a Si target.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2007 Jun|
- Europium silicate
- Rapid thermal annealing
ASJC Scopus subject areas
- Physics and Astronomy(all)