Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry

Kang Ju Lee, Tae Dong Kang, Hosun Lee, Seung Hui Hong, Suk Ho Choi, Tae Yeon Seong, Kyung Joong Kim, Dae Won Moon

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers. The SiO2(2 nm)/SiOx(2 nm) multilayers are prepared under various deposition temperatures by ion beam sputtering. Annealing at temperatures above 1100 °C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of multilayers. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentz lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si multilayers as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which is estimated from the stoichiometry of SiOx.

Original languageEnglish
Pages (from-to)196-200
Number of pages5
JournalThin Solid Films
Issue number1
Publication statusPublished - 2005 Apr 1
Externally publishedYes


  • Ellipsometry
  • Nanostructures
  • Silicon
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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