Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry

Kang Ju Lee; Tae Dong Kang; Hosun Lee; Seung Hui Hong; Suk Ho Choi; Tae Yeon Seong; Kyung Joong Kim; Dae Won Moon

doi:10.1016/j.tsf.2004.09.037

Optical properties of SiO₂/nanocrystalline Si multilayers studied using spectroscopic ellipsometry

Kang Ju Lee
, Tae Dong Kang
, Hosun Lee^*
, Seung Hui Hong
, Suk Ho Choi
, Tae Yeon Seong
, Kyung Joong Kim
, Dae Won Moon

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO₂/ SiO_x multilayers. The SiO₂(2 nm)/SiO_x(2 nm) multilayers are prepared under various deposition temperatures by ion beam sputtering. Annealing at temperatures above 1100 °C leads to the formation of Si nanocrystals (nc-Si) in the SiO_x layer of multilayers. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentz lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO₂/nc-Si multilayers as a mixture of nc-Si and SiO₂. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiO_x layer. This result is compared to expected nc-Si volume fraction, which is estimated from the stoichiometry of SiO_x.

Original language	English
Pages (from-to)	196-200
Number of pages	5
Journal	Thin Solid Films
Volume	476
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2004.09.037
Publication status	Published - 2005 Apr 1
Externally published	Yes

Bibliographical note

Funding Information:
H. Lee acknowledges partial support of 2003 Special Research Fund of Kyung Hee University. S.H. Choi acknowledges partial support from the National research program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Ministry of Science & Technology.

Keywords

Ellipsometry
Nanostructures
Silicon
Transmission electron microscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2004.09.037

Cite this

@article{b304f562c49645dfa388e09be6b2920e,

title = "Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry",

abstract = "Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers. The SiO2(2 nm)/SiOx(2 nm) multilayers are prepared under various deposition temperatures by ion beam sputtering. Annealing at temperatures above 1100 °C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of multilayers. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentz lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si multilayers as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which is estimated from the stoichiometry of SiOx.",

keywords = "Ellipsometry, Nanostructures, Silicon, Transmission electron microscopy",

author = "Lee, \{Kang Ju\} and Kang, \{Tae Dong\} and Hosun Lee and Hong, \{Seung Hui\} and Choi, \{Suk Ho\} and Seong, \{Tae Yeon\} and Kim, \{Kyung Joong\} and Moon, \{Dae Won\}",

note = "Funding Information: H. Lee acknowledges partial support of 2003 Special Research Fund of Kyung Hee University. S.H. Choi acknowledges partial support from the National research program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Ministry of Science \& Technology.",

year = "2005",

month = apr,

day = "1",

doi = "10.1016/j.tsf.2004.09.037",

language = "English",

volume = "476",

pages = "196--200",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry

AU - Lee, Kang Ju

AU - Kang, Tae Dong

AU - Lee, Hosun

AU - Hong, Seung Hui

AU - Choi, Suk Ho

AU - Seong, Tae Yeon

AU - Kim, Kyung Joong

AU - Moon, Dae Won

N1 - Funding Information: H. Lee acknowledges partial support of 2003 Special Research Fund of Kyung Hee University. S.H. Choi acknowledges partial support from the National research program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Ministry of Science & Technology.

PY - 2005/4/1

Y1 - 2005/4/1

N2 - Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers. The SiO2(2 nm)/SiOx(2 nm) multilayers are prepared under various deposition temperatures by ion beam sputtering. Annealing at temperatures above 1100 °C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of multilayers. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentz lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si multilayers as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which is estimated from the stoichiometry of SiOx.

AB - Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers. The SiO2(2 nm)/SiOx(2 nm) multilayers are prepared under various deposition temperatures by ion beam sputtering. Annealing at temperatures above 1100 °C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of multilayers. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentz lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si multilayers as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which is estimated from the stoichiometry of SiOx.

KW - Ellipsometry

KW - Nanostructures

KW - Silicon

KW - Transmission electron microscopy

UR - https://www.scopus.com/pages/publications/13844256780

U2 - 10.1016/j.tsf.2004.09.037

DO - 10.1016/j.tsf.2004.09.037

M3 - Article

AN - SCOPUS:13844256780

SN - 0040-6090

VL - 476

SP - 196

EP - 200

JO - Thin Solid Films

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