Optical signature of the electron injection in Ga2O3

Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, Shihyun Ahn, Fan Ren, Lin Yuna, Stephen J. Pearton, Jihyun Kim, Boris Meyler, Joseph Salzman

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Electron injection-induced effect and its impact on the optical properties of β-Ga2O3 ultra-wide bandgap semiconductor have not yet been studied. At the same time, this information is critical for β-Ga2O3 applications in photovoltaic devices such as, photodetectors. In this work, we report the variable temperature cathodoluminescence studies of silicon-implanted β-Ga2O3 and identify a possible mechanism for electron injection-induced luminescence decay observed in this material.

Original languageEnglish
Pages (from-to)Q3049-Q3051
JournalECS Journal of Solid State Science and Technology
Issue number2
Publication statusPublished - 2017

Bibliographical note

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© 2016 The Electrochemical Society. All rights reserved.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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