Optical signature of the electron injection in Ga2O3

Jonathan Lee; Elena Flitsiyan; Leonid Chernyak; Shihyun Ahn; Fan Ren; Lin Yuna; Stephen J. Pearton; Jihyun Kim; Boris Meyler; Joseph Salzman

doi:10.1149/2.0101702jss

Optical signature of the electron injection in Ga₂O₃

Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, Shihyun Ahn, Fan Ren, Lin Yuna, Stephen J. Pearton, Jihyun Kim, Boris Meyler, Joseph Salzman

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Electron injection-induced effect and its impact on the optical properties of β-Ga₂O₃ ultra-wide bandgap semiconductor have not yet been studied. At the same time, this information is critical for β-Ga₂O₃ applications in photovoltaic devices such as, photodetectors. In this work, we report the variable temperature cathodoluminescence studies of silicon-implanted β-Ga₂O₃ and identify a possible mechanism for electron injection-induced luminescence decay observed in this material.

Original language	English
Pages (from-to)	Q3049-Q3051
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	2
DOIs	https://doi.org/10.1149/2.0101702jss
Publication status	Published - 2017

Bibliographical note

Publisher Copyright:
© 2016 The Electrochemical Society. All rights reserved.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/2.0101702jss

Cite this

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AU - Flitsiyan, Elena

AU - Chernyak, Leonid

AU - Ahn, Shihyun

AU - Ren, Fan

AU - Yuna, Lin

AU - Pearton, Stephen J.

AU - Kim, Jihyun

AU - Meyler, Boris

AU - Salzman, Joseph

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