Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers

I. A. Buyanova; J. P. Bergman; W. M. Chen; G. Thaler; R. Frazier; C. R. Abernathy; S. J. Pearton; Jihyun Kim; F. Ren; F. V. Kyrychenko; C. J. Stanton; C. C. Pan; G. T. Chen; J. I. Chyi; J. M. Zavada

doi:10.1116/1.1819897

Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers

I. A. Buyanova, J. P. Bergman, W. M. Chen, G. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, Jihyun Kim, F. Ren, F. V. Kyrychenko, C. J. Stanton, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.

Original language	English
Pages (from-to)	2668-2672
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	6
DOIs	https://doi.org/10.1116/1.1819897
Publication status	Published - 2004 Nov
Externally published	Yes

Bibliographical note

Funding Information:
The work at Linköping University was partially supported by the Swedish Research Council. The work at UF is partially supported by AFOSR grant under Grant No. F49620-03-1-0370, by the Army Research Office under Grant nos. DAAD 19-01-1-0603 and DAAD19-01-1-0701, AFOSR (F49620-02-1-0366, G. Witt and F 49620-03-1-0370) and NSF (DMR 0400416, ECS 02242203). The work at NCU is partially supported by the Ministry of Education of R.O.C. under the Program for Promoting Academic Excellence of Universities (890E-FA06-1-4) and the National Science Council of R.O.C. (NSC89-2215-E-008-031).

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1819897

Cite this

Buyanova, I. A., Bergman, J. P., Chen, W. M., Thaler, G., Frazier, R., Abernathy, C. R., Pearton, S. J., Kim, J., Ren, F., Kyrychenko, F. V., Stanton, C. J., Pan, C. C., Chen, G. T., Chyi, J. I., & Zavada, J. M. (2004). Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22(6), 2668-2672. https://doi.org/10.1116/1.1819897

Buyanova, IA, Bergman, JP, Chen, WM, Thaler, G, Frazier, R, Abernathy, CR, Pearton, SJ, Kim, J, Ren, F, Kyrychenko, FV, Stanton, CJ, Pan, CC, Chen, GT, Chyi, JI & Zavada, JM 2004, 'Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 6, pp. 2668-2672. https://doi.org/10.1116/1.1819897

@article{dd51758dfb5f436ab16f9674cf28d4b0,

title = "Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers",

abstract = "The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.",

author = "Buyanova, {I. A.} and Bergman, {J. P.} and Chen, {W. M.} and G. Thaler and R. Frazier and Abernathy, {C. R.} and Pearton, {S. J.} and Jihyun Kim and F. Ren and Kyrychenko, {F. V.} and Stanton, {C. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and Zavada, {J. M.}",

note = "Funding Information: The work at Link{\"o}ping University was partially supported by the Swedish Research Council. The work at UF is partially supported by AFOSR grant under Grant No. F49620-03-1-0370, by the Army Research Office under Grant nos. DAAD 19-01-1-0603 and DAAD19-01-1-0701, AFOSR (F49620-02-1-0366, G. Witt and F 49620-03-1-0370) and NSF (DMR 0400416, ECS 02242203). The work at NCU is partially supported by the Ministry of Education of R.O.C. under the Program for Promoting Academic Excellence of Universities (890E-FA06-1-4) and the National Science Council of R.O.C. (NSC89-2215-E-008-031).",

year = "2004",

month = nov,

doi = "10.1116/1.1819897",

language = "English",

volume = "22",

pages = "2668--2672",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

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TY - JOUR

T1 - Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers

AU - Buyanova, I. A.

AU - Bergman, J. P.

AU - Chen, W. M.

AU - Thaler, G.

AU - Frazier, R.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Kim, Jihyun

AU - Ren, F.

AU - Kyrychenko, F. V.

AU - Stanton, C. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Zavada, J. M.

N1 - Funding Information: The work at Linköping University was partially supported by the Swedish Research Council. The work at UF is partially supported by AFOSR grant under Grant No. F49620-03-1-0370, by the Army Research Office under Grant nos. DAAD 19-01-1-0603 and DAAD19-01-1-0701, AFOSR (F49620-02-1-0366, G. Witt and F 49620-03-1-0370) and NSF (DMR 0400416, ECS 02242203). The work at NCU is partially supported by the Ministry of Education of R.O.C. under the Program for Promoting Academic Excellence of Universities (890E-FA06-1-4) and the National Science Council of R.O.C. (NSC89-2215-E-008-031).

PY - 2004/11

Y1 - 2004/11

N2 - The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.

AB - The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.

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U2 - 10.1116/1.1819897

DO - 10.1116/1.1819897

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SN - 1071-1023

VL - 22

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EP - 2672

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers

Abstract

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