Abstract
We report pseudodielectric function data 〈∈〉 = 〈∈1〉 + i〈∈2〉 of ZnSexTe1 - x samples grown on GaAs substrates. The data were obtained from 1.5 to 6.5 eV using spectroscopic ellipsometry. Critical-point parameters were obtained by fitting model line shapes to numerically calculated second-energy derivatives of 〈∈〉. The bowing parameters of E0, E1, and E1 + Δ1 were determined and were comparable to that of E0 quoted from the literature. We observed a monotonie increase of the linewidth of the E1 gap up to x = 0.85, whereas that of E1 + Δ1 showed a maximum value near x = 0.5. We attribute this anomalous broadening of the E1 gap to sample microstructures developed in the low-Te composition alloys.
Original language | English |
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Pages (from-to) | 2997-2999 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 77 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2000 Nov 6 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)