Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD

Ji Su Son; Hyeon Baik Kwang; Gon Seo Yong; Hooyoung Song; Hoon Kim Ji; Sung Min Hwang; Tae Geun Kim

doi:10.1016/j.jcrysgro.2011.01.061

Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD

Ji Su Son, Hyeon Baik Kwang, Gon Seo Yong, Hooyoung Song, Hoon Kim Ji, Sung Min Hwang, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The optimal conditions of p-type activation for nonpolar a-plane (1 1 2 0) p-type GaN films on r-plane (1 1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58×10¹⁹ cm^-3 were maintained in GaN during epitaxial growth. The samples were activated at various temperatures and periods of time in air, oxygen (O ₂) and nitrogen (N₂) gas ambient by conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The activation of nonpolar a-plane p-type GaN was successful in similar annealing times and temperatures when compared with polar c-plane p-type GaN. However, activation ambient of nonpolar a-plane p-type GaN was clearly different, where a-plane p-type GaN was effectively activated in air ambient. Photoluminescence shows that the optical properties of Mg-doped a-plane GaN samples are enhanced when activated in air ambient.

Original language	English
Pages (from-to)	98-102
Number of pages	5
Journal	Journal of Crystal Growth
Volume	326
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.01.061
Publication status	Published - 2011 Jul 1

Keywords

A1. Activation
A1. Ambient
A3. MOCVD
B1. a-plane p-type GaN
B2. Hole concentration

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.01.061

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title = "Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD",

abstract = "The optimal conditions of p-type activation for nonpolar a-plane (1 1 2 0) p-type GaN films on r-plane (1 1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58×1019 cm-3 were maintained in GaN during epitaxial growth. The samples were activated at various temperatures and periods of time in air, oxygen (O 2) and nitrogen (N2) gas ambient by conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The activation of nonpolar a-plane p-type GaN was successful in similar annealing times and temperatures when compared with polar c-plane p-type GaN. However, activation ambient of nonpolar a-plane p-type GaN was clearly different, where a-plane p-type GaN was effectively activated in air ambient. Photoluminescence shows that the optical properties of Mg-doped a-plane GaN samples are enhanced when activated in air ambient.",

keywords = "A1. Activation, A1. Ambient, A3. MOCVD, B1. a-plane p-type GaN, B2. Hole concentration",

author = "Son, {Ji Su} and Kwang, {Hyeon Baik} and Yong, {Gon Seo} and Hooyoung Song and Ji, {Hoon Kim} and Hwang, {Sung Min} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by the IT R&D program (Project no. 2009-F-022-01 ) under the funding of the Department of the Ministry of Knowledge Economy at Korea Electronics Technology Institute .",

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T1 - Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD

AU - Son, Ji Su

AU - Kwang, Hyeon Baik

AU - Yong, Gon Seo

AU - Song, Hooyoung

AU - Ji, Hoon Kim

AU - Hwang, Sung Min

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by the IT R&D program (Project no. 2009-F-022-01 ) under the funding of the Department of the Ministry of Knowledge Economy at Korea Electronics Technology Institute .

PY - 2011/7/1

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N2 - The optimal conditions of p-type activation for nonpolar a-plane (1 1 2 0) p-type GaN films on r-plane (1 1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58×1019 cm-3 were maintained in GaN during epitaxial growth. The samples were activated at various temperatures and periods of time in air, oxygen (O 2) and nitrogen (N2) gas ambient by conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The activation of nonpolar a-plane p-type GaN was successful in similar annealing times and temperatures when compared with polar c-plane p-type GaN. However, activation ambient of nonpolar a-plane p-type GaN was clearly different, where a-plane p-type GaN was effectively activated in air ambient. Photoluminescence shows that the optical properties of Mg-doped a-plane GaN samples are enhanced when activated in air ambient.

AB - The optimal conditions of p-type activation for nonpolar a-plane (1 1 2 0) p-type GaN films on r-plane (1 1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58×1019 cm-3 were maintained in GaN during epitaxial growth. The samples were activated at various temperatures and periods of time in air, oxygen (O 2) and nitrogen (N2) gas ambient by conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The activation of nonpolar a-plane p-type GaN was successful in similar annealing times and temperatures when compared with polar c-plane p-type GaN. However, activation ambient of nonpolar a-plane p-type GaN was clearly different, where a-plane p-type GaN was effectively activated in air ambient. Photoluminescence shows that the optical properties of Mg-doped a-plane GaN samples are enhanced when activated in air ambient.

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KW - B1. a-plane p-type GaN

KW - B2. Hole concentration

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Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD

Abstract

Keywords

ASJC Scopus subject areas

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