Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
GaN Layers
100%
Sapphire Substrate
100%
P-GaN
100%
A-plane
100%
Activation Conditions
100%
R-plane Sapphire
100%
Air Ambient
33%
C-plane
16%
Photoluminescence
16%
Optical Properties
16%
Epitaxial Growth
16%
P-type
16%
GaN Films
16%
Rapid Thermal Annealing
16%
Mg Doping
16%
Annealing Temperature
16%
Secondary Ion Mass Spectrometry
16%
Cm(III)
16%
Annealing Time
16%
Gas Atmosphere
16%
N2 Gas
16%
A-plane GaN
16%
Mg Doping Concentration
16%
Conventional Furnace Annealing
16%
Air Oxygen
16%
Off-axis Angle
16%
Engineering
Sapphire Substrate
100%
Ambient Air
100%
Periodic Time
50%
Rapid Thermal Annealing
50%
Optimal Condition
50%
Annealing Temperature
50%
Annealing Time
50%
Annealing Furnace
50%
Material Science
Sapphire
100%
Film
50%
Photoluminescence
50%
Optical Property
50%
Epitaxy
50%
Secondary Ion Mass Spectrometry
50%
Mass Spectrometry
50%