Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD

  • Ji Su Son
  • , Hyeon Baik Kwang
  • , Gon Seo Yong
  • , Hooyoung Song
  • , Hoon Kim Ji
  • , Sung Min Hwang
  • , Tae Geun Kim*
    • *Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

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