Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses

Young Chul Shin; Dong Hoon Kang; Bum Jun Kim; Chang Yun Lee; Byung Jin Ma; Joon Seok Kang; Sang Bum Lee; Young Min Kim; Soohaeng Cho; Yong Jo Park; M. D. Kim; Shi Jong Leem; Tae Geun Kim

doi:10.3938/jkps.50.866

Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses

Young Chul Shin, Dong Hoon Kang, Bum Jun Kim, Chang Yun Lee, Byung Jin Ma, Joon Seok Kang, Sang Bum Lee, Young Min Kim, Soohaeng Cho, Yong Jo Park, M. D. Kim, Shi Jong Leem, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report high power and high temperature operation of 660-nm-band AlGaInP laser diodes. The double-channel ridge waveguide structure was used, and the growth conditions for each layer of the AlGaInP laser were optimized to have the lowest defect density by using deep-level transient spectroscopy (DLTS) analyses. The optimized AlGaInP lasers showed better performance than those fabricated without optimization. One of the optimized AlGaInP lasers showed a very stable fundamental transverse mode even at 200 mW and 70 °C, a typical threshold current of 64 mA at 660 nm, a slope efficiency of 1.0 W/A, and a characteristic temperature of 212 K. The beam divergences perpendicular and parallel to the junction plane were 15.3° and 8.6°, respectively, at 80 mW CW, which is small enough for a DVD-R/RW system.

Original language	English
Pages (from-to)	866-870
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.866
Publication status	Published - 2007 Mar

Keywords

AlGaInP
DLTS
Deep-level defects
High power
High temperature
Semiconductor lasers

ASJC Scopus subject areas

General Physics and Astronomy

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10.3938/jkps.50.866

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@article{fcc82ff2af254447a17c7ae10a524111,

title = "Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses",

abstract = "We report high power and high temperature operation of 660-nm-band AlGaInP laser diodes. The double-channel ridge waveguide structure was used, and the growth conditions for each layer of the AlGaInP laser were optimized to have the lowest defect density by using deep-level transient spectroscopy (DLTS) analyses. The optimized AlGaInP lasers showed better performance than those fabricated without optimization. One of the optimized AlGaInP lasers showed a very stable fundamental transverse mode even at 200 mW and 70 °C, a typical threshold current of 64 mA at 660 nm, a slope efficiency of 1.0 W/A, and a characteristic temperature of 212 K. The beam divergences perpendicular and parallel to the junction plane were 15.3° and 8.6°, respectively, at 80 mW CW, which is small enough for a DVD-R/RW system.",

keywords = "AlGaInP, DLTS, Deep-level defects, High power, High temperature, Semiconductor lasers",

author = "Shin, {Young Chul} and Kang, {Dong Hoon} and Kim, {Bum Jun} and Lee, {Chang Yun} and Ma, {Byung Jin} and Kang, {Joon Seok} and Lee, {Sang Bum} and Kim, {Young Min} and Soohaeng Cho and Park, {Yong Jo} and Kim, {M. D.} and Leem, {Shi Jong} and Kim, {Tae Geun}",

year = "2007",

month = mar,

doi = "10.3938/jkps.50.866",

language = "English",

volume = "50",

pages = "866--870",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "3",

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TY - JOUR

T1 - Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses

AU - Shin, Young Chul

AU - Kang, Dong Hoon

AU - Kim, Bum Jun

AU - Lee, Chang Yun

AU - Ma, Byung Jin

AU - Kang, Joon Seok

AU - Lee, Sang Bum

AU - Kim, Young Min

AU - Cho, Soohaeng

AU - Park, Yong Jo

AU - Kim, M. D.

AU - Leem, Shi Jong

AU - Kim, Tae Geun

PY - 2007/3

Y1 - 2007/3

N2 - We report high power and high temperature operation of 660-nm-band AlGaInP laser diodes. The double-channel ridge waveguide structure was used, and the growth conditions for each layer of the AlGaInP laser were optimized to have the lowest defect density by using deep-level transient spectroscopy (DLTS) analyses. The optimized AlGaInP lasers showed better performance than those fabricated without optimization. One of the optimized AlGaInP lasers showed a very stable fundamental transverse mode even at 200 mW and 70 °C, a typical threshold current of 64 mA at 660 nm, a slope efficiency of 1.0 W/A, and a characteristic temperature of 212 K. The beam divergences perpendicular and parallel to the junction plane were 15.3° and 8.6°, respectively, at 80 mW CW, which is small enough for a DVD-R/RW system.

AB - We report high power and high temperature operation of 660-nm-band AlGaInP laser diodes. The double-channel ridge waveguide structure was used, and the growth conditions for each layer of the AlGaInP laser were optimized to have the lowest defect density by using deep-level transient spectroscopy (DLTS) analyses. The optimized AlGaInP lasers showed better performance than those fabricated without optimization. One of the optimized AlGaInP lasers showed a very stable fundamental transverse mode even at 200 mW and 70 °C, a typical threshold current of 64 mA at 660 nm, a slope efficiency of 1.0 W/A, and a characteristic temperature of 212 K. The beam divergences perpendicular and parallel to the junction plane were 15.3° and 8.6°, respectively, at 80 mW CW, which is small enough for a DVD-R/RW system.

KW - AlGaInP

KW - DLTS

KW - Deep-level defects

KW - High power

KW - High temperature

KW - Semiconductor lasers

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U2 - 10.3938/jkps.50.866

DO - 10.3938/jkps.50.866

M3 - Article

AN - SCOPUS:34147105390

SN - 0374-4884

VL - 50

SP - 866

EP - 870

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Optimization of 660-nm-band AlGaInP laser diodes by using deep-level transient spectroscopy analyses

Abstract

Keywords

ASJC Scopus subject areas

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