Abstract
We report high power and high temperature operation of 660-nm-band AlGaInP laser diodes. The double-channel ridge waveguide structure was used, and the growth conditions for each layer of the AlGaInP laser were optimized to have the lowest defect density by using deep-level transient spectroscopy (DLTS) analyses. The optimized AlGaInP lasers showed better performance than those fabricated without optimization. One of the optimized AlGaInP lasers showed a very stable fundamental transverse mode even at 200 mW and 70 °C, a typical threshold current of 64 mA at 660 nm, a slope efficiency of 1.0 W/A, and a characteristic temperature of 212 K. The beam divergences perpendicular and parallel to the junction plane were 15.3° and 8.6°, respectively, at 80 mW CW, which is small enough for a DVD-R/RW system.
Original language | English |
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Pages (from-to) | 866-870 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 50 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2007 Mar |
Keywords
- AlGaInP
- DLTS
- Deep-level defects
- High power
- High temperature
- Semiconductor lasers
ASJC Scopus subject areas
- Physics and Astronomy(all)