TY - JOUR
T1 - Optimization of germanium (Ge) n+/p and p+/n junction diodes and sub 380 °c Ge CMOS technology for monolithic three-dimensional integration
AU - Park, Jin Hong
AU - Kuzum, Duygu
AU - Yu, Hyun Yong
AU - Saraswat, Krishna C.
N1 - Funding Information:
Manuscript received January 27, 2011; accepted April 21, 2011. Date of publication May 19, 2011; date of current version July 22, 2011. This work was supported by the Defense Advanced Research Projects Agency 3-D-Integrated Circuits Program and was done in Stanford Nanofabrication Facility of National Nanotechnology Infrastructure Network. The review of this paper was arranged by Editor M. J. Kumar.
PY - 2011/8
Y1 - 2011/8
N2 - In this paper, we optimize and investigate Ge n+/p and p +/n junction diodes formed by Co metal-induced dopant activation technique at the activation temperature range between 300 °C and 420 °C in terms of on/ off-current ratio. Combining this low-temperature n +/p and p+/n junction formation technique with a low-temperature gate stack comprised of Al/Al2O3/GeO 2 by ozone oxidation technique, we demonstrate n- and p-channel Ge metal-oxide-semiconductor field-effect transistors (MOSFETs), respectively, at sub-360 °C and 380 °C. This low-temperature Ge MOSFET process can be utilized to integrate Ge complementary metal-oxide-semiconductor devices above interconnect layers for monolithic 3-D integrated circuits.
AB - In this paper, we optimize and investigate Ge n+/p and p +/n junction diodes formed by Co metal-induced dopant activation technique at the activation temperature range between 300 °C and 420 °C in terms of on/ off-current ratio. Combining this low-temperature n +/p and p+/n junction formation technique with a low-temperature gate stack comprised of Al/Al2O3/GeO 2 by ozone oxidation technique, we demonstrate n- and p-channel Ge metal-oxide-semiconductor field-effect transistors (MOSFETs), respectively, at sub-360 °C and 380 °C. This low-temperature Ge MOSFET process can be utilized to integrate Ge complementary metal-oxide-semiconductor devices above interconnect layers for monolithic 3-D integrated circuits.
KW - Germanium (Ge) junction diode
KW - metal-induced crystallization (MIC)
KW - metal-induced dopants activation (MIDA)
KW - monolithic 3-D integrated circuit (3-D-IC)
UR - http://www.scopus.com/inward/record.url?scp=79960837543&partnerID=8YFLogxK
U2 - 10.1109/TED.2011.2148199
DO - 10.1109/TED.2011.2148199
M3 - Article
AN - SCOPUS:79960837543
SN - 0018-9383
VL - 58
SP - 2394
EP - 2400
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
M1 - 5770202
ER -