Optimization of the GaN-buffer growth on 6H-SiC (0001)

Dongjin Byun; Gyeungho Kim; Dongsup Lim; Dokyol Lee; In Hoon Choi; Dalkeun Park; Dong Wha Kum

doi:10.1016/S0040-6090(96)08999-7

Optimization of the GaN-buffer growth on 6H-SiC (0001)

Dongjin Byun, Gyeungho Kim, Dongsup Lim, Dokyol Lee, In Hoon Choi, Dalkeun Park, Dong Wha Kum

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Buffer layers promote lateral growth of films due to a decrease in the interfacial free energy between the film and substrate, and large 2-dimensional nucleation and a smooth surface of the buffer layer are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by means of atomic force microscopy (AFM). GaN depositions were carried out in a horizontal MOCVD system using trimethylgallium and NH₃. AFM analysis of the GaN nucleation layers led to optimum growth conditions for the GaN-buffer layer and this was confirmed by cross-sectional transmission electron microscopy, Hall measurement and photoluminescence spectra. The optimum growth condition for a GaN-buffer layer on SiC(0001) was determined to be 1 minute of growth at 550°C.

Original language	English
Pages (from-to)	256-260
Number of pages	5
Journal	Thin Solid Films
Volume	289
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)08999-7
Publication status	Published - 1996 Nov 30
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported through KIST-2000 Research Program (Grant No. BSV00020-002-4 ). The authors would like m thank Dr. Chang H. Hong at LG Electronics Research Center and Jin S. Kim at KIST for their technical support and discussions.

Keywords

Atomic force microscopy
Chemical vapour deposition
Gallium nitride
Transmission electron microscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(96)08999-7

Cite this

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title = "Optimization of the GaN-buffer growth on 6H-SiC (0001)",

abstract = "Buffer layers promote lateral growth of films due to a decrease in the interfacial free energy between the film and substrate, and large 2-dimensional nucleation and a smooth surface of the buffer layer are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by means of atomic force microscopy (AFM). GaN depositions were carried out in a horizontal MOCVD system using trimethylgallium and NH3. AFM analysis of the GaN nucleation layers led to optimum growth conditions for the GaN-buffer layer and this was confirmed by cross-sectional transmission electron microscopy, Hall measurement and photoluminescence spectra. The optimum growth condition for a GaN-buffer layer on SiC(0001) was determined to be 1 minute of growth at 550°C.",

keywords = "Atomic force microscopy, Chemical vapour deposition, Gallium nitride, Transmission electron microscopy",

author = "Dongjin Byun and Gyeungho Kim and Dongsup Lim and Dokyol Lee and Choi, {In Hoon} and Dalkeun Park and Kum, {Dong Wha}",

note = "Funding Information: This work was supported through KIST-2000 Research Program (Grant No. BSV00020-002-4 ). The authors would like m thank Dr. Chang H. Hong at LG Electronics Research Center and Jin S. Kim at KIST for their technical support and discussions.",

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doi = "10.1016/S0040-6090(96)08999-7",

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T1 - Optimization of the GaN-buffer growth on 6H-SiC (0001)

AU - Byun, Dongjin

AU - Kim, Gyeungho

AU - Lim, Dongsup

AU - Lee, Dokyol

AU - Choi, In Hoon

AU - Park, Dalkeun

AU - Kum, Dong Wha

N1 - Funding Information: This work was supported through KIST-2000 Research Program (Grant No. BSV00020-002-4 ). The authors would like m thank Dr. Chang H. Hong at LG Electronics Research Center and Jin S. Kim at KIST for their technical support and discussions.

PY - 1996/11/30

Y1 - 1996/11/30

N2 - Buffer layers promote lateral growth of films due to a decrease in the interfacial free energy between the film and substrate, and large 2-dimensional nucleation and a smooth surface of the buffer layer are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by means of atomic force microscopy (AFM). GaN depositions were carried out in a horizontal MOCVD system using trimethylgallium and NH3. AFM analysis of the GaN nucleation layers led to optimum growth conditions for the GaN-buffer layer and this was confirmed by cross-sectional transmission electron microscopy, Hall measurement and photoluminescence spectra. The optimum growth condition for a GaN-buffer layer on SiC(0001) was determined to be 1 minute of growth at 550°C.

AB - Buffer layers promote lateral growth of films due to a decrease in the interfacial free energy between the film and substrate, and large 2-dimensional nucleation and a smooth surface of the buffer layer are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by means of atomic force microscopy (AFM). GaN depositions were carried out in a horizontal MOCVD system using trimethylgallium and NH3. AFM analysis of the GaN nucleation layers led to optimum growth conditions for the GaN-buffer layer and this was confirmed by cross-sectional transmission electron microscopy, Hall measurement and photoluminescence spectra. The optimum growth condition for a GaN-buffer layer on SiC(0001) was determined to be 1 minute of growth at 550°C.

KW - Atomic force microscopy

KW - Chemical vapour deposition

KW - Gallium nitride

KW - Transmission electron microscopy

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JF - Thin Solid Films

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ER -

Optimization of the GaN-buffer growth on 6H-SiC (0001)

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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