Optimization of the GaN-buffer growth on 6H-SiC (0001)

Dongjin Byun, Gyeungho Kim, Dongsup Lim, Dokyol Lee, In Hoon Choi, Dalkeun Park, Dong Wha Kum

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


Buffer layers promote lateral growth of films due to a decrease in the interfacial free energy between the film and substrate, and large 2-dimensional nucleation and a smooth surface of the buffer layer are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by means of atomic force microscopy (AFM). GaN depositions were carried out in a horizontal MOCVD system using trimethylgallium and NH3. AFM analysis of the GaN nucleation layers led to optimum growth conditions for the GaN-buffer layer and this was confirmed by cross-sectional transmission electron microscopy, Hall measurement and photoluminescence spectra. The optimum growth condition for a GaN-buffer layer on SiC(0001) was determined to be 1 minute of growth at 550°C.

Original languageEnglish
Pages (from-to)256-260
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1996 Nov 30
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported through KIST-2000 Research Program (Grant No. BSV00020-002-4 ). The authors would like m thank Dr. Chang H. Hong at LG Electronics Research Center and Jin S. Kim at KIST for their technical support and discussions.


  • Atomic force microscopy
  • Chemical vapour deposition
  • Gallium nitride
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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