Abstract
We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10sup22/sup to 4.99 × 10sup21/sup cmsup-3/sup with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cmsup2/sup/V. The samples had sheet resistances of 4.17-4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10sup-5/sup to 6.43 × 10sup-5/sup Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10sup-3/sup Ωsup-1/sup.
| Original language | English |
|---|---|
| Pages (from-to) | 452-455 |
| Number of pages | 4 |
| Journal | Current Applied Physics |
| Volume | 15 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2015 Apr |
Keywords
- Indium gallium zinc oxide Ag Multilayer Transparent conducting electrode
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
