Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Jun Ho Kim; Hankyeol Lee; Jin Young Na; Sun Kyung Kim; Young Zo Yoo; Tae Yeon Seong

doi:10.1016/j.cap.2015.02.003

Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Jun Ho Kim
, Hankyeol Lee
, Jin Young Na
, Sun Kyung Kim
, Young Zo Yoo
, Tae Yeon Seong^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10sup22/sup to 4.99 × 10sup21/sup cmsup-3/sup with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cmsup2/sup/V. The samples had sheet resistances of 4.17-4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10sup-5/sup to 6.43 × 10sup-5/sup Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10sup-3/sup Ωsup-1/sup.

Original language	English
Pages (from-to)	452-455
Number of pages	4
Journal	Current Applied Physics
Volume	15
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2015.02.003
Publication status	Published - 2015 Apr

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V.

Keywords

Indium gallium zinc oxide Ag Multilayer Transparent conducting electrode

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.cap.2015.02.003

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@article{28e0cc64608341a88f6466d8bad1fafc,

title = "Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices",

abstract = "We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7\% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10sup22/sup to 4.99 × 10sup21/sup cmsup-3/sup with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cmsup2/sup/V. The samples had sheet resistances of 4.17-4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10sup-5/sup to 6.43 × 10sup-5/sup Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10sup-3/sup Ωsup-1/sup.",

keywords = "Indium gallium zinc oxide Ag Multilayer Transparent conducting electrode",

author = "Kim, \{Jun Ho\} and Hankyeol Lee and Na, \{Jin Young\} and Kim, \{Sun Kyung\} and Yoo, \{Young Zo\} and Seong, \{Tae Yeon\}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = apr,

doi = "10.1016/j.cap.2015.02.003",

language = "English",

volume = "15",

pages = "452--455",

journal = "Current Applied Physics",

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T1 - Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

AU - Kim, Jun Ho

AU - Lee, Hankyeol

AU - Na, Jin Young

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Seong, Tae Yeon

PY - 2015/4

Y1 - 2015/4

N2 - We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10sup22/sup to 4.99 × 10sup21/sup cmsup-3/sup with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cmsup2/sup/V. The samples had sheet resistances of 4.17-4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10sup-5/sup to 6.43 × 10sup-5/sup Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10sup-3/sup Ωsup-1/sup.

AB - We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 × 10sup22/sup to 4.99 × 10sup21/sup cmsup-3/sup with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cmsup2/sup/V. The samples had sheet resistances of 4.17-4.39 Ω/sq with increasing IGZO thickness, while the resistivity increased from 1.89 × 10sup-5/sup to 6.43 × 10sup-5/sup Ω cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 × 10sup-3/sup Ωsup-1/sup.

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DO - 10.1016/j.cap.2015.02.003

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Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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