Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides

Woosuk Choi; Imtisal Akhtar; Dongwoon Kang; Yeon Jae Lee; Jongwan Jung; Yeon Ho Kim; Chul Ho Lee; David J. Hwang; Yongho Seo

doi:10.1021/acs.nanolett.9b05212

Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides

Woosuk Choi, Imtisal Akhtar, Dongwoon Kang, Yeon Jae Lee, Jongwan Jung, Yeon Ho Kim, Chul Ho Lee, David J. Hwang, Yongho Seo

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Among p-n junction devices with multilayered heterostructures with WSe₂ and MoSe₂, a device with the MoSe₂-WSe₂-MoSe₂ (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe₂-WSe₂ (NP) structure. The ideality factor of the NPN structure was estimated to be â1, lower than that of the NP structure. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe₂ and WSe₂. Hence, the built-in electric field was weaker, and the motion of the photocarriers was facilitated. These behaviors were confirmed experimentally from a photocurrent mapping analysis and Kelvin probe force microscopy. The work function depended on the wavelength of the illuminator, and quasi-Fermi level was estimated. The surface photovoltage on the MoSe₂ region was higher than that on WSe₂ because the lower bandgap of MoSe₂ induces more electron-hole pair generation.

Original language	English
Pages (from-to)	1934-1943
Number of pages	10
Journal	Nano Letters
Volume	20
Issue number	3
DOIs	https://doi.org/10.1021/acs.nanolett.9b05212
Publication status	Published - 2020 Mar 11

Bibliographical note

Publisher Copyright:
Copyright © 2020 American Chemical Society.

Keywords

MoSe
Multilayered heterostructures
Transition metal dichalcogenides
Two-dimensional materials
WSe
p-n junction

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/acs.nanolett.9b05212

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title = "Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides",

abstract = "Among p-n junction devices with multilayered heterostructures with WSe2 and MoSe2, a device with the MoSe2-WSe2-MoSe2 (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe2-WSe2 (NP) structure. The ideality factor of the NPN structure was estimated to be {\^a}1, lower than that of the NP structure. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe2 and WSe2. Hence, the built-in electric field was weaker, and the motion of the photocarriers was facilitated. These behaviors were confirmed experimentally from a photocurrent mapping analysis and Kelvin probe force microscopy. The work function depended on the wavelength of the illuminator, and quasi-Fermi level was estimated. The surface photovoltage on the MoSe2 region was higher than that on WSe2 because the lower bandgap of MoSe2 induces more electron-hole pair generation.",

keywords = "MoSe, Multilayered heterostructures, Transition metal dichalcogenides, Two-dimensional materials, WSe, p-n junction",

author = "Woosuk Choi and Imtisal Akhtar and Dongwoon Kang and Lee, {Yeon Jae} and Jongwan Jung and Kim, {Yeon Ho} and Lee, {Chul Ho} and Hwang, {David J.} and Yongho Seo",

note = "Publisher Copyright: Copyright {\textcopyright} 2020 American Chemical Society.",

year = "2020",

month = mar,

day = "11",

doi = "10.1021/acs.nanolett.9b05212",

language = "English",

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AU - Choi, Woosuk

AU - Akhtar, Imtisal

AU - Kang, Dongwoon

AU - Lee, Yeon Jae

AU - Jung, Jongwan

AU - Kim, Yeon Ho

AU - Lee, Chul Ho

AU - Hwang, David J.

AU - Seo, Yongho

PY - 2020/3/11

Y1 - 2020/3/11

N2 - Among p-n junction devices with multilayered heterostructures with WSe2 and MoSe2, a device with the MoSe2-WSe2-MoSe2 (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe2-WSe2 (NP) structure. The ideality factor of the NPN structure was estimated to be â1, lower than that of the NP structure. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe2 and WSe2. Hence, the built-in electric field was weaker, and the motion of the photocarriers was facilitated. These behaviors were confirmed experimentally from a photocurrent mapping analysis and Kelvin probe force microscopy. The work function depended on the wavelength of the illuminator, and quasi-Fermi level was estimated. The surface photovoltage on the MoSe2 region was higher than that on WSe2 because the lower bandgap of MoSe2 induces more electron-hole pair generation.

AB - Among p-n junction devices with multilayered heterostructures with WSe2 and MoSe2, a device with the MoSe2-WSe2-MoSe2 (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe2-WSe2 (NP) structure. The ideality factor of the NPN structure was estimated to be â1, lower than that of the NP structure. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe2 and WSe2. Hence, the built-in electric field was weaker, and the motion of the photocarriers was facilitated. These behaviors were confirmed experimentally from a photocurrent mapping analysis and Kelvin probe force microscopy. The work function depended on the wavelength of the illuminator, and quasi-Fermi level was estimated. The surface photovoltage on the MoSe2 region was higher than that on WSe2 because the lower bandgap of MoSe2 induces more electron-hole pair generation.

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KW - Transition metal dichalcogenides

KW - Two-dimensional materials

KW - WSe

KW - p-n junction

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SN - 1530-6984

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ER -

Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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