Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides

Woosuk Choi; Imtisal Akhtar; Dongwoon Kang; Yeon Jae Lee; Jongwan Jung; Yeon Ho Kim; Chul Ho Lee; David J. Hwang; Yongho Seo

doi:10.1021/acs.nanolett.9b05212

Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides

Woosuk Choi
, Imtisal Akhtar
, Dongwoon Kang
, Yeon Jae Lee
, Jongwan Jung
, Yeon Ho Kim
, Chul Ho Lee
, David J. Hwang
, Yongho Seo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Among p-n junction devices with multilayered heterostructures with WSe₂ and MoSe₂, a device with the MoSe₂-WSe₂-MoSe₂ (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe₂-WSe₂ (NP) structure. The ideality factor of the NPN structure was estimated to be â1, lower than that of the NP structure. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe₂ and WSe₂. Hence, the built-in electric field was weaker, and the motion of the photocarriers was facilitated. These behaviors were confirmed experimentally from a photocurrent mapping analysis and Kelvin probe force microscopy. The work function depended on the wavelength of the illuminator, and quasi-Fermi level was estimated. The surface photovoltage on the MoSe₂ region was higher than that on WSe₂ because the lower bandgap of MoSe₂ induces more electron-hole pair generation.

Original language	English
Pages (from-to)	1934-1943
Number of pages	10
Journal	Nano Letters
Volume	20
Issue number	3
DOIs	https://doi.org/10.1021/acs.nanolett.9b05212
Publication status	Published - 2020 Mar 11

Bibliographical note

Publisher Copyright:
Copyright © 2020 American Chemical Society.

Keywords

MoSe
Multilayered heterostructures
Transition metal dichalcogenides
Two-dimensional materials
WSe
p-n junction

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/acs.nanolett.9b05212

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title = "Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides",

abstract = "Among p-n junction devices with multilayered heterostructures with WSe2 and MoSe2, a device with the MoSe2-WSe2-MoSe2 (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe2-WSe2 (NP) structure. The ideality factor of the NPN structure was estimated to be {\^a}1, lower than that of the NP structure. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe2 and WSe2. Hence, the built-in electric field was weaker, and the motion of the photocarriers was facilitated. These behaviors were confirmed experimentally from a photocurrent mapping analysis and Kelvin probe force microscopy. The work function depended on the wavelength of the illuminator, and quasi-Fermi level was estimated. The surface photovoltage on the MoSe2 region was higher than that on WSe2 because the lower bandgap of MoSe2 induces more electron-hole pair generation.",

keywords = "MoSe, Multilayered heterostructures, Transition metal dichalcogenides, Two-dimensional materials, WSe, p-n junction",

author = "Woosuk Choi and Imtisal Akhtar and Dongwoon Kang and Lee, \{Yeon Jae\} and Jongwan Jung and Kim, \{Yeon Ho\} and Lee, \{Chul Ho\} and Hwang, \{David J.\} and Yongho Seo",

note = "Publisher Copyright: Copyright {\textcopyright} 2020 American Chemical Society.",

year = "2020",

month = mar,

day = "11",

doi = "10.1021/acs.nanolett.9b05212",

language = "English",

volume = "20",

pages = "1934--1943",

journal = "Nano Letters",

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T1 - Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides

AU - Choi, Woosuk

AU - Akhtar, Imtisal

AU - Kang, Dongwoon

AU - Lee, Yeon Jae

AU - Jung, Jongwan

AU - Kim, Yeon Ho

AU - Lee, Chul Ho

AU - Hwang, David J.

AU - Seo, Yongho

PY - 2020/3/11

Y1 - 2020/3/11

N2 - Among p-n junction devices with multilayered heterostructures with WSe2 and MoSe2, a device with the MoSe2-WSe2-MoSe2 (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe2-WSe2 (NP) structure. The ideality factor of the NPN structure was estimated to be â1, lower than that of the NP structure. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe2 and WSe2. Hence, the built-in electric field was weaker, and the motion of the photocarriers was facilitated. These behaviors were confirmed experimentally from a photocurrent mapping analysis and Kelvin probe force microscopy. The work function depended on the wavelength of the illuminator, and quasi-Fermi level was estimated. The surface photovoltage on the MoSe2 region was higher than that on WSe2 because the lower bandgap of MoSe2 induces more electron-hole pair generation.

AB - Among p-n junction devices with multilayered heterostructures with WSe2 and MoSe2, a device with the MoSe2-WSe2-MoSe2 (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe2-WSe2 (NP) structure. The ideality factor of the NPN structure was estimated to be â1, lower than that of the NP structure. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe2 and WSe2. Hence, the built-in electric field was weaker, and the motion of the photocarriers was facilitated. These behaviors were confirmed experimentally from a photocurrent mapping analysis and Kelvin probe force microscopy. The work function depended on the wavelength of the illuminator, and quasi-Fermi level was estimated. The surface photovoltage on the MoSe2 region was higher than that on WSe2 because the lower bandgap of MoSe2 induces more electron-hole pair generation.

KW - MoSe

KW - Multilayered heterostructures

KW - Transition metal dichalcogenides

KW - Two-dimensional materials

KW - WSe

KW - p-n junction

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U2 - 10.1021/acs.nanolett.9b05212

DO - 10.1021/acs.nanolett.9b05212

M3 - Article

C2 - 32083883

AN - SCOPUS:85081944854

SN - 1530-6984

VL - 20

SP - 1934

EP - 1943

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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