Ordering and associated domain structures in zinc and silicon doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on GaAs by metalorganic vapour phase epitaxy

Tae Yeon Seong; Do Geun Kim; Dong Hoon Jang; Jung Kee Lee

doi:10.1143/jjap.35.5607

Ordering and associated domain structures in zinc and silicon doped Ga_0.51In_0.49P and Ga_xIn_1-xAs_yP_1-y layers grown on GaAs by metalorganic vapour phase epitaxy

Tae Yeon Seong, Do Geun Kim, Dong Hoon Jang, Jung Kee Lee

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been made of Zn- and Si-doped Ga_0.51In_0.49P and Ga_xIn_1-xAs_yP_1-y layers grown on (001) GaAs substrates to examine CuPt-type atomic ordering and associated domain structures. The ordering was dependent on the doping levels of Si and Zn atoms. The ordering was also found to depend on composition variations in GaInAsP layers. As for the GaInP layer, the ordered domains as viewed in [001] plan-view showed complicated structures with a density of antiphase boundaries (APBs) and were of width ∼ 0.5 to ∼ 1.2 μm. It was suggested that surface steps associated with surface undulations have a major influence on the domain structures. Mechanisms were proposed to explain how the domain structures arise.

Original language	English
Pages (from-to)	5607-5611
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	11
DOIs	https://doi.org/10.1143/jjap.35.5607
Publication status	Published - 1996 Nov
Externally published	Yes

Keywords

Doping, transmission electron microscope (TEM)
GaInAsP
GaInP
MOVPE
Ordering
Transmission electron diffraction (TED)

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.35.5607

Cite this

Seong, T. Y., Kim, D. G., Jang, D. H., & Lee, J. K. (1996). Ordering and associated domain structures in zinc and silicon doped Ga_0.51In_0.49P and Ga_xIn_1-xAs_yP_1-y layers grown on GaAs by metalorganic vapour phase epitaxy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35(11), 5607-5611. https://doi.org/10.1143/jjap.35.5607

Ordering and associated domain structures in zinc and silicon doped Ga_0.51In_0.49P and Ga_xIn_1-xAs_yP_1-y layers grown on GaAs by metalorganic vapour phase epitaxy. / Seong, Tae Yeon; Kim, Do Geun; Jang, Dong Hoon et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 11, 11.1996, p. 5607-5611.

Research output: Contribution to journal › Article › peer-review

Seong, TY, Kim, DG, Jang, DH & Lee, JK 1996, 'Ordering and associated domain structures in zinc and silicon doped Ga_0.51In_0.49P and Ga_xIn_1-xAs_yP_1-y layers grown on GaAs by metalorganic vapour phase epitaxy', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 35, no. 11, pp. 5607-5611. https://doi.org/10.1143/jjap.35.5607

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abstract = "Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been made of Zn- and Si-doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on (001) GaAs substrates to examine CuPt-type atomic ordering and associated domain structures. The ordering was dependent on the doping levels of Si and Zn atoms. The ordering was also found to depend on composition variations in GaInAsP layers. As for the GaInP layer, the ordered domains as viewed in [001] plan-view showed complicated structures with a density of antiphase boundaries (APBs) and were of width ∼ 0.5 to ∼ 1.2 μm. It was suggested that surface steps associated with surface undulations have a major influence on the domain structures. Mechanisms were proposed to explain how the domain structures arise.",

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