Ordering and Microstructures of GaN1-xAsx Layers Grown on (0001) GaN/Sapphire Substrates

Tae Yeon Seong, In Tae Bae, Chel Jong Choi, Y. Zhao, C. W. Tu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Transmission electron microscope and transmission electron diffraction examinations have been performed to investigate the ordering and microstructures of molecular beam epitaxial GaN1-xAsx layers grown on (0001) GaN/sapphire at temperatures between 500 and 730°C. We report the observation of ordering with a space group P3m1 in the GaNAs layer grown at 730°C. The GaNAs layers grown at temperatures below 600°C are polycrystalline, while the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc blende phase to a wurtzite phase, as the growth temperature increases from 500 to 730°C.

Original languageEnglish
Pages (from-to)94-96
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number2
Publication statusPublished - 1999 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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