Ordering and Microstructures of GaN1-xAsx Layers Grown on (0001) GaN/Sapphire Substrates

Tae Yeon Seong; In Tae Bae; Chel Jong Choi; Y. Zhao; C. W. Tu

doi:10.1149/1.1390746

Ordering and Microstructures of GaN_1-xAs_x Layers Grown on (0001) GaN/Sapphire Substrates

Tae Yeon Seong, In Tae Bae, Chel Jong Choi, Y. Zhao, C. W. Tu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Transmission electron microscope and transmission electron diffraction examinations have been performed to investigate the ordering and microstructures of molecular beam epitaxial GaN_1-xAs_x layers grown on (0001) GaN/sapphire at temperatures between 500 and 730°C. We report the observation of ordering with a space group P3m1 in the GaNAs layer grown at 730°C. The GaNAs layers grown at temperatures below 600°C are polycrystalline, while the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc blende phase to a wurtzite phase, as the growth temperature increases from 500 to 730°C.

Original language	English
Pages (from-to)	94-96
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	2
Issue number	2
DOIs	https://doi.org/10.1149/1.1390746
Publication status	Published - 1999 Feb
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.1390746

Cite this

@article{43fec58751a24766b6c2cdcc8743be31,

title = "Ordering and Microstructures of GaN1-xAsx Layers Grown on (0001) GaN/Sapphire Substrates",

abstract = "Transmission electron microscope and transmission electron diffraction examinations have been performed to investigate the ordering and microstructures of molecular beam epitaxial GaN1-xAsx layers grown on (0001) GaN/sapphire at temperatures between 500 and 730°C. We report the observation of ordering with a space group P3m1 in the GaNAs layer grown at 730°C. The GaNAs layers grown at temperatures below 600°C are polycrystalline, while the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc blende phase to a wurtzite phase, as the growth temperature increases from 500 to 730°C.",

author = "Seong, {Tae Yeon} and Bae, {In Tae} and Choi, {Chel Jong} and Y. Zhao and Tu, {C. W.}",

year = "1999",

month = feb,

doi = "10.1149/1.1390746",

language = "English",

volume = "2",

pages = "94--96",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "2",

}

TY - JOUR

T1 - Ordering and Microstructures of GaN1-xAsx Layers Grown on (0001) GaN/Sapphire Substrates

AU - Seong, Tae Yeon

AU - Bae, In Tae

AU - Choi, Chel Jong

AU - Zhao, Y.

AU - Tu, C. W.

PY - 1999/2

Y1 - 1999/2

N2 - Transmission electron microscope and transmission electron diffraction examinations have been performed to investigate the ordering and microstructures of molecular beam epitaxial GaN1-xAsx layers grown on (0001) GaN/sapphire at temperatures between 500 and 730°C. We report the observation of ordering with a space group P3m1 in the GaNAs layer grown at 730°C. The GaNAs layers grown at temperatures below 600°C are polycrystalline, while the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc blende phase to a wurtzite phase, as the growth temperature increases from 500 to 730°C.

AB - Transmission electron microscope and transmission electron diffraction examinations have been performed to investigate the ordering and microstructures of molecular beam epitaxial GaN1-xAsx layers grown on (0001) GaN/sapphire at temperatures between 500 and 730°C. We report the observation of ordering with a space group P3m1 in the GaNAs layer grown at 730°C. The GaNAs layers grown at temperatures below 600°C are polycrystalline, while the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc blende phase to a wurtzite phase, as the growth temperature increases from 500 to 730°C.

UR - http://www.scopus.com/inward/record.url?scp=0033075256&partnerID=8YFLogxK

U2 - 10.1149/1.1390746

DO - 10.1149/1.1390746

M3 - Article

AN - SCOPUS:0033075256

SN - 1099-0062

VL - 2

SP - 94

EP - 96

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Ordering and Microstructures of GaN_1-xAs_x Layers Grown on (0001) GaN/Sapphire Substrates

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this