Organic thin-film transistors with short channel length fabricated by reverse offset printing

Minseok Kim; In Kyu You; Hyun Han; Soon Won Jung; Tae Youb Kim; Byeong Kwon Ju; Jae Bon Koo

doi:10.1149/1.3591435

Organic thin-film transistors with short channel length fabricated by reverse offset printing

Minseok Kim, In Kyu You, Hyun Han, Soon Won Jung, Tae Youb Kim, Byeong Kwon Ju, Jae Bon Koo

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 μm and resistivity of 3 × 10^-6 ω cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 μm were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes.

Original language	English
Pages (from-to)	H333-H336
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	8
DOIs	https://doi.org/10.1149/1.3591435
Publication status	Published - 2011

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 μm and resistivity of 3 × 10-6 ω cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 μm were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes.",

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AU - Kim, Minseok

AU - You, In Kyu

AU - Han, Hyun

AU - Jung, Soon Won

AU - Kim, Tae Youb

AU - Ju, Byeong Kwon

AU - Koo, Jae Bon

PY - 2011

Y1 - 2011

N2 - We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 μm and resistivity of 3 × 10-6 ω cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 μm were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes.

AB - We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 μm and resistivity of 3 × 10-6 ω cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 μm were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes.

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Organic thin-film transistors with short channel length fabricated by reverse offset printing

Abstract

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