We have investigated the temperature-dependent electrical properties of the p-n junction formed between a p-type pentacene film and n-type SnO2 nanowires. Rectifying current-voltage characteristics were observed and analyzed by a series resistance and a diode model. As temperature decreased, forward current decreased fitting to the diode equation of I = I0[exp(η kT) - 1] with a large ideality factor reaching η ∼ 420, indicating large surface states at the junction parts. The activation energy of the series resistance from the Arrhenius plot was estimated to be 35.6 meV indicating the dominant contribution of the pentacene layer as a series resistance in the equivalent model.
|Journal||Japanese journal of applied physics|
|Issue number||10 PART 1|
|Publication status||Published - 2011 Oct|
ASJC Scopus subject areas
- Physics and Astronomy(all)