Origin of lowered crystallization temperature in SBT-BTT ferroelectric thin films

Woo Chul Kwak; Gopinathan M.A. Kumar; Se Yon Jung; Seung Joon Hwang; Yun Mo Sung

Origin of lowered crystallization temperature in SBT-BTT ferroelectric thin films

Woo Chul Kwak, Gopinathan M.A. Kumar, Se Yon Jung, Seung Joon Hwang, Yun Mo Sung

Research output: Contribution to journal › Conference article › peer-review

Abstract

The crystallization kinetics of SBT and SBT-BTT thin films formed by sol-gel technique on Pt substrate was studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetics analysis was performed on x-ray diffraction (XRD) patterns of the thin films heated in the range 730 to 760°C at 10°C intervals. Activation energy and Avrami exponent values were determined for the fluorite of Aurivillus phase formation. A reduction of ∼55 kJ/mol in activation is observed for the SBT-BTT system. A comparison has been made and the possible crystallization mechanism is discussed.

Original language	English
Pages (from-to)	95-100
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	688
Publication status	Published - 2002
Externally published	Yes
Event	Ferroelectric Thin Films X - Boston, MA, United States Duration: 2001 Nov 25 → 2001 Nov 29

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Origin of lowered crystallization temperature in SBT-BTT ferroelectric thin films",

abstract = "The crystallization kinetics of SBT and SBT-BTT thin films formed by sol-gel technique on Pt substrate was studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetics analysis was performed on x-ray diffraction (XRD) patterns of the thin films heated in the range 730 to 760°C at 10°C intervals. Activation energy and Avrami exponent values were determined for the fluorite of Aurivillus phase formation. A reduction of ∼55 kJ/mol in activation is observed for the SBT-BTT system. A comparison has been made and the possible crystallization mechanism is discussed.",

author = "Kwak, {Woo Chul} and Kumar, {Gopinathan M.A.} and Jung, {Se Yon} and Hwang, {Seung Joon} and Sung, {Yun Mo}",

year = "2002",

language = "English",

volume = "688",

pages = "95--100",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Ferroelectric Thin Films X ; Conference date: 25-11-2001 Through 29-11-2001",

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TY - JOUR

T1 - Origin of lowered crystallization temperature in SBT-BTT ferroelectric thin films

AU - Kwak, Woo Chul

AU - Kumar, Gopinathan M.A.

AU - Jung, Se Yon

AU - Hwang, Seung Joon

AU - Sung, Yun Mo

PY - 2002

Y1 - 2002

N2 - The crystallization kinetics of SBT and SBT-BTT thin films formed by sol-gel technique on Pt substrate was studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetics analysis was performed on x-ray diffraction (XRD) patterns of the thin films heated in the range 730 to 760°C at 10°C intervals. Activation energy and Avrami exponent values were determined for the fluorite of Aurivillus phase formation. A reduction of ∼55 kJ/mol in activation is observed for the SBT-BTT system. A comparison has been made and the possible crystallization mechanism is discussed.

AB - The crystallization kinetics of SBT and SBT-BTT thin films formed by sol-gel technique on Pt substrate was studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetics analysis was performed on x-ray diffraction (XRD) patterns of the thin films heated in the range 730 to 760°C at 10°C intervals. Activation energy and Avrami exponent values were determined for the fluorite of Aurivillus phase formation. A reduction of ∼55 kJ/mol in activation is observed for the SBT-BTT system. A comparison has been made and the possible crystallization mechanism is discussed.

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UR - http://www.scopus.com/inward/citedby.url?scp=0036353525&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036353525

SN - 0272-9172

VL - 688

SP - 95

EP - 100

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films X

Y2 - 25 November 2001 through 29 November 2001

ER -

Origin of lowered crystallization temperature in SBT-BTT ferroelectric thin films

Abstract

ASJC Scopus subject areas

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