Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

Tian Li, Sanghoon Kim, Seung Jae Lee, Seo Won Lee, Tomohiro Koyama, Daichi Chiba, Takahiro Moriyama, Kyung Jin Lee, Kab Jin Kim, Teruo Ono

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16 Citations (Scopus)


The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.

Original languageEnglish
Article number073001
JournalApplied Physics Express
Issue number7
Publication statusPublished - 2017 Jul

Bibliographical note

Funding Information:
This work was partly supported by JSPS KAKENHI Grant Numbers 15H05702, 26870300, 26870304, 26103002, 25220604, and 2604316; the Collaborative Research Program of the Institute for Chemical Research, Kyoto University; the Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University; and the R&D project for ICT Key Technology of MEXT from the Japan Society for the Promotion of Science (JSPS). KJK was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2017R1C1B2009686). KJL was supported by the National Research Foundation of Korea (NRF-2015M3D1A1070465 and NRF-2017R1A2B2006119).

Publisher Copyright:
© 2017 The Japan Society of Applied Physics.

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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