Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

Tian Li; Sanghoon Kim; Seung Jae Lee; Seo Won Lee; Tomohiro Koyama; Daichi Chiba; Takahiro Moriyama; Kyung Jin Lee; Kab Jin Kim; Teruo Ono

doi:10.7567/APEX.10.073001

Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

Tian Li, Sanghoon Kim, Seung Jae Lee, Seo Won Lee, Tomohiro Koyama, Daichi Chiba, Takahiro Moriyama, Kyung Jin Lee, Kab Jin Kim, Teruo Ono

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.

Original language	English
Article number	073001
Journal	Applied Physics Express
Volume	10
Issue number	7
DOIs	https://doi.org/10.7567/APEX.10.073001
Publication status	Published - 2017 Jul

Bibliographical note

Funding Information:
This work was partly supported by JSPS KAKENHI Grant Numbers 15H05702, 26870300, 26870304, 26103002, 25220604, and 2604316; the Collaborative Research Program of the Institute for Chemical Research, Kyoto University; the Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University; and the R&D project for ICT Key Technology of MEXT from the Japan Society for the Promotion of Science (JSPS). KJK was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2017R1C1B2009686). KJL was supported by the National Research Foundation of Korea (NRF-2015M3D1A1070465 and NRF-2017R1A2B2006119).

Publisher Copyright:
© 2017 The Japan Society of Applied Physics.

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers",

abstract = "The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.",

author = "Tian Li and Sanghoon Kim and Lee, {Seung Jae} and Lee, {Seo Won} and Tomohiro Koyama and Daichi Chiba and Takahiro Moriyama and Lee, {Kyung Jin} and Kim, {Kab Jin} and Teruo Ono",

note = "Funding Information: This work was partly supported by JSPS KAKENHI Grant Numbers 15H05702, 26870300, 26870304, 26103002, 25220604, and 2604316; the Collaborative Research Program of the Institute for Chemical Research, Kyoto University; the Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University; and the R&D project for ICT Key Technology of MEXT from the Japan Society for the Promotion of Science (JSPS). KJK was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2017R1C1B2009686). KJL was supported by the National Research Foundation of Korea (NRF-2015M3D1A1070465 and NRF-2017R1A2B2006119). Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.",

year = "2017",

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doi = "10.7567/APEX.10.073001",

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journal = "Applied Physics Express",

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T1 - Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

AU - Li, Tian

AU - Kim, Sanghoon

AU - Lee, Seung Jae

AU - Lee, Seo Won

AU - Koyama, Tomohiro

AU - Chiba, Daichi

AU - Moriyama, Takahiro

AU - Lee, Kyung Jin

AU - Kim, Kab Jin

AU - Ono, Teruo

N1 - Funding Information: This work was partly supported by JSPS KAKENHI Grant Numbers 15H05702, 26870300, 26870304, 26103002, 25220604, and 2604316; the Collaborative Research Program of the Institute for Chemical Research, Kyoto University; the Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University; and the R&D project for ICT Key Technology of MEXT from the Japan Society for the Promotion of Science (JSPS). KJK was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2017R1C1B2009686). KJL was supported by the National Research Foundation of Korea (NRF-2015M3D1A1070465 and NRF-2017R1A2B2006119). Publisher Copyright: © 2017 The Japan Society of Applied Physics.

PY - 2017/7

Y1 - 2017/7

N2 - The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.

AB - The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.

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Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

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