@inproceedings{fd88a39620be428c8f892179946d7e03,
title = "Oscillator and amplifier grids",
abstract = "The authors present the largest recorded output power for a quasi-optical power-combining array and a new planar heterojunction bipolar transistor (HBT) grid amplifier design. A 16-element MESFET grid oscillator has been fabricated that generated an effective radiated power of 28 W at 9.21 GHz. The total radiated power was estimated to be 2.0 W, giving a DC to RF efficiency of 28%. A new planar grid amplifier is also presented that is suitable for monolithic fabrication. The planar amplifier grid is a hybrid design using HBT transistors monolithically fabricated in a differential pair configuration and wire bonded to a Duroid substrate. The grid amplifier had a measured gain of 11 dB at 9.9 GHz.",
author = "David Rutledge and Hacker, {Jonathan B.} and Moonil Kim and Weikle, {Robert M.} and Smith, {R. Peter} and Emilio Sovero",
year = "1992",
language = "English",
isbn = "0780306112",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Publ by IEEE",
pages = "815--818",
booktitle = "IEEE MTT-S International Microwave Symposium Digest",
note = "1992 IEEE MTT-S International Microwave Symposium Digest Part 2 (of 3) ; Conference date: 01-06-1992 Through 05-06-1992",
}