OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction

June Whan Choi; Ho Gyu Yoon; Jai Kyeong Kim

doi:10.1016/j.orgel.2010.03.011

OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction

June Whan Choi, Ho Gyu Yoon, Jai Kyeong Kim

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol-gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol-gel process and patterned by UV cross-linking below 120 °C. Leakage currents of dielectric layers remained below 10^-9 A under operating voltage and dielectric constants were measured to be ∼6.5 at 10 kHz. The field effect mobility and on-off ratio were ∼0.86 cm²/V s and ∼10⁴, respectively. These results demonstrate that sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.

Original language	English
Pages (from-to)	1145-1148
Number of pages	4
Journal	Organic Electronics
Volume	11
Issue number	6
DOIs	https://doi.org/10.1016/j.orgel.2010.03.011
Publication status	Published - 2010 Jun

Keywords

Hybrid gate insulators
OTFTs
Organic thin-film transistors
Organic-inorganic hybrid materials
Pentacene organic semiconductor
Sol-gel materials

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2010.03.011

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title = "OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction",

abstract = "The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol-gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol-gel process and patterned by UV cross-linking below 120 °C. Leakage currents of dielectric layers remained below 10-9 A under operating voltage and dielectric constants were measured to be ∼6.5 at 10 kHz. The field effect mobility and on-off ratio were ∼0.86 cm2/V s and ∼104, respectively. These results demonstrate that sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.",

keywords = "Hybrid gate insulators, OTFTs, Organic thin-film transistors, Organic-inorganic hybrid materials, Pentacene organic semiconductor, Sol-gel materials",

author = "Choi, {June Whan} and Yoon, {Ho Gyu} and Kim, {Jai Kyeong}",

year = "2010",

month = jun,

doi = "10.1016/j.orgel.2010.03.011",

language = "English",

volume = "11",

pages = "1145--1148",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction

AU - Choi, June Whan

AU - Yoon, Ho Gyu

AU - Kim, Jai Kyeong

PY - 2010/6

Y1 - 2010/6

N2 - The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol-gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol-gel process and patterned by UV cross-linking below 120 °C. Leakage currents of dielectric layers remained below 10-9 A under operating voltage and dielectric constants were measured to be ∼6.5 at 10 kHz. The field effect mobility and on-off ratio were ∼0.86 cm2/V s and ∼104, respectively. These results demonstrate that sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.

AB - The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol-gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol-gel process and patterned by UV cross-linking below 120 °C. Leakage currents of dielectric layers remained below 10-9 A under operating voltage and dielectric constants were measured to be ∼6.5 at 10 kHz. The field effect mobility and on-off ratio were ∼0.86 cm2/V s and ∼104, respectively. These results demonstrate that sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.

KW - Hybrid gate insulators

KW - OTFTs

KW - Organic thin-film transistors

KW - Organic-inorganic hybrid materials

KW - Pentacene organic semiconductor

KW - Sol-gel materials

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U2 - 10.1016/j.orgel.2010.03.011

DO - 10.1016/j.orgel.2010.03.011

M3 - Article

AN - SCOPUS:78349308195

SN - 1566-1199

VL - 11

SP - 1145

EP - 1148

JO - Organic Electronics

JF - Organic Electronics

IS - 6

ER -

OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction

Abstract

Keywords

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