Overcoming Zn segregation in CdZnTe with the temperature gradient annealing

K. Kim; A. E. Bolotnikov; G. S. Camarda; A. Hossain; R. B. James

doi:10.1016/j.jcrysgro.2016.02.038

Overcoming Zn segregation in CdZnTe with the temperature gradient annealing

K. Kim, A. E. Bolotnikov, G. S. Camarda, A. Hossain, R. B. James

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The availability of large volume crystals with the same energy gap in melt-grown CdZnTe (CZT) is restricted due to the Zn segregation in CdTe hosts. We observed the migration of Zn in the solid phase along the positive temperature gradient direction both in situ and post-growth temperature gradient annealing (TGA) of CZT. Diffusivity of Zn obtained from the in situ TGA was approximately 10^-5 cm²/s order and completely different mechanism with that of post-growth. The CZT ingots obtained through in situ TGA have uniform Zn and resistivity of 10¹⁰Ωcm orders. The CZT detectors fabricated from in situ TGA applied ingots exhibit 10% of energy resolution for 59.5 keV peak of ²⁴¹Am.

Original language	English
Pages (from-to)	98-101
Number of pages	4
Journal	Journal of Crystal Growth
Volume	442
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.02.038
Publication status	Published - 2016 May 15

Keywords

A1. Segregation
A2. Bridgman technique
B1. Cadmium compounds
B2. Semiconducting II-VI materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2016.02.038

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title = "Overcoming Zn segregation in CdZnTe with the temperature gradient annealing",

abstract = "The availability of large volume crystals with the same energy gap in melt-grown CdZnTe (CZT) is restricted due to the Zn segregation in CdTe hosts. We observed the migration of Zn in the solid phase along the positive temperature gradient direction both in situ and post-growth temperature gradient annealing (TGA) of CZT. Diffusivity of Zn obtained from the in situ TGA was approximately 10-5 cm2/s order and completely different mechanism with that of post-growth. The CZT ingots obtained through in situ TGA have uniform Zn and resistivity of 1010Ωcm orders. The CZT detectors fabricated from in situ TGA applied ingots exhibit 10% of energy resolution for 59.5 keV peak of 241Am.",

keywords = "A1. Segregation, A2. Bridgman technique, B1. Cadmium compounds, B2. Semiconducting II-VI materials",

author = "K. Kim and Bolotnikov, {A. E.} and Camarda, {G. S.} and A. Hossain and James, {R. B.}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIP) ( NRF-2015M2B2A9032788 and NRF-2015M2A2A4A01045094 ) and the U.S. Department of Energy Office of Defense Nuclear Nonproliferation Research and Development, DNN R&D . Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved.",

year = "2016",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2016.02.038",

language = "English",

volume = "442",

pages = "98--101",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Overcoming Zn segregation in CdZnTe with the temperature gradient annealing

AU - Kim, K.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Hossain, A.

AU - James, R. B.

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIP) ( NRF-2015M2B2A9032788 and NRF-2015M2A2A4A01045094 ) and the U.S. Department of Energy Office of Defense Nuclear Nonproliferation Research and Development, DNN R&D . Publisher Copyright: © 2016 Elsevier B.V. All rights reserved.

PY - 2016/5/15

Y1 - 2016/5/15

N2 - The availability of large volume crystals with the same energy gap in melt-grown CdZnTe (CZT) is restricted due to the Zn segregation in CdTe hosts. We observed the migration of Zn in the solid phase along the positive temperature gradient direction both in situ and post-growth temperature gradient annealing (TGA) of CZT. Diffusivity of Zn obtained from the in situ TGA was approximately 10-5 cm2/s order and completely different mechanism with that of post-growth. The CZT ingots obtained through in situ TGA have uniform Zn and resistivity of 1010Ωcm orders. The CZT detectors fabricated from in situ TGA applied ingots exhibit 10% of energy resolution for 59.5 keV peak of 241Am.

AB - The availability of large volume crystals with the same energy gap in melt-grown CdZnTe (CZT) is restricted due to the Zn segregation in CdTe hosts. We observed the migration of Zn in the solid phase along the positive temperature gradient direction both in situ and post-growth temperature gradient annealing (TGA) of CZT. Diffusivity of Zn obtained from the in situ TGA was approximately 10-5 cm2/s order and completely different mechanism with that of post-growth. The CZT ingots obtained through in situ TGA have uniform Zn and resistivity of 1010Ωcm orders. The CZT detectors fabricated from in situ TGA applied ingots exhibit 10% of energy resolution for 59.5 keV peak of 241Am.

KW - A1. Segregation

KW - A2. Bridgman technique

KW - B1. Cadmium compounds

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=84961215052&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.02.038

DO - 10.1016/j.jcrysgro.2016.02.038

M3 - Article

AN - SCOPUS:84961215052

SN - 0022-0248

VL - 442

SP - 98

EP - 101

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Overcoming Zn segregation in CdZnTe with the temperature gradient annealing

Abstract

Keywords

ASJC Scopus subject areas

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