Oxidation endurance of boron nitride nanotube field emitters

Yenan Song; Dong Hoon Shin; Ki Nam Yun; Cheol Jin Lee; Yoon Ho Song; William I. Milne

doi:10.1109/IVNC.2014.6894830

Oxidation endurance of boron nitride nanotube field emitters

Yenan Song^*
, Dong Hoon Shin
, Ki Nam Yun
, Cheol Jin Lee
, Yoon Ho Song
, William I. Milne

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm² and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.

Original language	English
Title of host publication	Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	235-236
Number of pages	2
ISBN (Print)	9781479953080
DOIs	https://doi.org/10.1109/IVNC.2014.6894830
Publication status	Published - 2014 Jan 1
Event	2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 - Engelberg, Switzerland Duration: 2014 Jul 6 → 2014 Jul 10

Other

Other	2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
Country/Territory	Switzerland
City	Engelberg
Period	14/7/6 → 14/7/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IVNC.2014.6894830

Cite this

Oxidation endurance of boron nitride nanotube field emitters. / Song, Yenan; Shin, Dong Hoon; Yun, Ki Nam et al.
Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 235-236 6894830.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Song, Y, Shin, DH, Yun, KN, Lee, CJ, Song, YH & Milne, WI 2014, Oxidation endurance of boron nitride nanotube field emitters. in Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014., 6894830, Institute of Electrical and Electronics Engineers Inc., pp. 235-236, 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014, Engelberg, Switzerland, 14/7/6. https://doi.org/10.1109/IVNC.2014.6894830

@inproceedings{7958d8c416044c14b94ed20dcda8e3d0,

title = "Oxidation endurance of boron nitride nanotube field emitters",

abstract = "Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm2 and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.",

keywords = "Boron nitride nanotubes, Field emission, Oxidation endurance",

author = "Yenan Song and Shin, \{Dong Hoon\} and Yun, \{Ki Nam\} and Lee, \{Cheol Jin\} and Song, \{Yoon Ho\} and Milne, \{William I.\}",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/IVNC.2014.6894830",

language = "English",

isbn = "9781479953080",

pages = "235--236",

booktitle = "Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 ; Conference date: 06-07-2014 Through 10-07-2014",

}

TY - GEN

T1 - Oxidation endurance of boron nitride nanotube field emitters

AU - Song, Yenan

AU - Shin, Dong Hoon

AU - Yun, Ki Nam

AU - Lee, Cheol Jin

AU - Song, Yoon Ho

AU - Milne, William I.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm2 and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.

AB - Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm2 and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.

KW - Boron nitride nanotubes

KW - Field emission

KW - Oxidation endurance

UR - https://www.scopus.com/pages/publications/84908570695

UR - https://www.scopus.com/pages/publications/84908570695#tab=citedBy

U2 - 10.1109/IVNC.2014.6894830

DO - 10.1109/IVNC.2014.6894830

M3 - Conference contribution

AN - SCOPUS:84908570695

SN - 9781479953080

SP - 235

EP - 236

BT - Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014

Y2 - 6 July 2014 through 10 July 2014

ER -

Oxidation endurance of boron nitride nanotube field emitters

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