Abstract
Herein, the oxidation resistance effect of B on the high-temperature sintering of Cu-based metallisation for crystalline Si solar cells is described. Atmospheric sintering of B-containing Cu–Ag core-shell paste printed on a Si wafer is performed at high temperatures (up to 800°C). The oxidation of Cu is effectively prevented by B, affording a brown bulky Cu–Ag film with low electrical resistivity (order of 10−6 Ω cm). The Cu–Ag film formation is monitored via microscopic and crystallographic analyses. The Cu–Ag film exhibits increased electrical conductivity with increasing B content from 0 to 5 wt.%. X-ray photoelectron spectroscopy data reveal that the B2O3 formed on the Cu–Ag film surface prevents external oxygen diffusion into the bulk. The developed paste is applied to a crystalline Si solar cell, affording a maximum efficiency of 17.55%. These results show the practical applicability of Cu-based electrodes in the solar cell industry.
Original language | English |
---|---|
Pages (from-to) | 1264-1271 |
Number of pages | 8 |
Journal | Energy Science and Engineering |
Volume | 10 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2022 Apr |
Bibliographical note
Funding Information:This work was supported by the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant awarded by the Ministry of Trade, Industry & Energy, Republic of Korea (Nos. 20203030010300 and 20213030010290).
Publisher Copyright:
© 2022 The Authors. Energy Science & Engineering published by Society of Chemical Industry and John Wiley & Sons Ltd.
Keywords
- boron
- copper oxidation
- copper paste
- metallisation
- silicon solar cell
ASJC Scopus subject areas
- Safety, Risk, Reliability and Quality
- General Energy