Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

Seo Hyoung Chang, Shin Buhm Lee, Dae Young Jeon, So Jung Park, Gyu Tae Kim, Sang Mo Yang, Seung Chul Chae, Hyang Keun Yoo, Bo Soo Kang, Myoung Jae Lee, Tae Won Noh

Research output: Contribution to journalArticlepeer-review

113 Citations (Scopus)


A TiO 2/VO 2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO 2 and VO 2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

Original languageEnglish
Pages (from-to)4063-4067
Number of pages5
JournalAdvanced Materials
Issue number35
Publication statusPublished - 2011 Sept 15


  • crossbar architecture
  • nanodevices
  • resistance switching
  • sneak path problem
  • titanium dioxide

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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