Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

Seo Hyoung Chang; Shin Buhm Lee; Dae Young Jeon; So Jung Park; Gyu Tae Kim; Sang Mo Yang; Seung Chul Chae; Hyang Keun Yoo; Bo Soo Kang; Myoung Jae Lee; Tae Won Noh

doi:10.1002/adma.201102395

Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

Seo Hyoung Chang
, Shin Buhm Lee
, Dae Young Jeon
, So Jung Park
, Gyu Tae Kim
, Sang Mo Yang
, Seung Chul Chae
, Hyang Keun Yoo
, Bo Soo Kang
, Myoung Jae Lee
, Tae Won Noh^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

118 Citations (Scopus)

Abstract

A TiO ₂/VO ₂ oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO ₂ and VO ₂ thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

Original language	English
Pages (from-to)	4063-4067
Number of pages	5
Journal	Advanced Materials
Volume	23
Issue number	35
DOIs	https://doi.org/10.1002/adma.201102395
Publication status	Published - 2011 Sept 15

Keywords

crossbar architecture
nanodevices
resistance switching
sneak path problem
titanium dioxide

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201102395

Cite this

@article{d4797dde579649bc8b8067bd0dbc619d,

title = "Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory",

abstract = "A TiO 2/VO 2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO 2 and VO 2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.",

keywords = "crossbar architecture, nanodevices, resistance switching, sneak path problem, titanium dioxide",

author = "Chang, \{Seo Hyoung\} and Lee, \{Shin Buhm\} and Jeon, \{Dae Young\} and Park, \{So Jung\} and Kim, \{Gyu Tae\} and Yang, \{Sang Mo\} and Chae, \{Seung Chul\} and Yoo, \{Hyang Keun\} and Kang, \{Bo Soo\} and Lee, \{Myoung Jae\} and Noh, \{Tae Won\}",

year = "2011",

month = sep,

day = "15",

doi = "10.1002/adma.201102395",

language = "English",

volume = "23",

pages = "4063--4067",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "35",

}

TY - JOUR

T1 - Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

AU - Chang, Seo Hyoung

AU - Lee, Shin Buhm

AU - Jeon, Dae Young

AU - Park, So Jung

AU - Kim, Gyu Tae

AU - Yang, Sang Mo

AU - Chae, Seung Chul

AU - Yoo, Hyang Keun

AU - Kang, Bo Soo

AU - Lee, Myoung Jae

AU - Noh, Tae Won

PY - 2011/9/15

Y1 - 2011/9/15

N2 - A TiO 2/VO 2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO 2 and VO 2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

AB - A TiO 2/VO 2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO 2 and VO 2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

KW - crossbar architecture

KW - nanodevices

KW - resistance switching

KW - sneak path problem

KW - titanium dioxide

UR - https://www.scopus.com/pages/publications/80052519585

U2 - 10.1002/adma.201102395

DO - 10.1002/adma.201102395

M3 - Article

C2 - 21809400

AN - SCOPUS:80052519585

SN - 0935-9648

VL - 23

SP - 4063

EP - 4067

JO - Advanced Materials

JF - Advanced Materials

IS - 35

ER -

Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this