Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films

Eung Ryul Park; Hyuk Kyoo Jang; Eung Kil Kang; Cheol Eui Lee

doi:10.1016/j.materresbull.2005.09.010

Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films

Eung Ryul Park, Hyuk Kyoo Jang, Eung Kil Kang, Cheol Eui Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol-gel-derived Pb(Zrx,Ti1-x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450-°C. Subsequent RF oxygen-plasma treatment at 200 and 300-°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15-μC/cm².

Original language	English
Pages (from-to)	536-540
Number of pages	5
Journal	Materials Research Bulletin
Volume	41
Issue number	3
DOIs	https://doi.org/10.1016/j.materresbull.2005.09.010
Publication status	Published - 2006 Mar 9

Keywords

A. Thin films
B. Epitaxial growth
C. Photoelectron spectroscopy
D. Ferroelectricity

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.materresbull.2005.09.010

Cite this

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title = "Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films",

abstract = "Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol-gel-derived Pb(Zrx,Ti1-x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450-°C. Subsequent RF oxygen-plasma treatment at 200 and 300-°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15-μC/cm2.",

keywords = "A. Thin films, B. Epitaxial growth, C. Photoelectron spectroscopy, D. Ferroelectricity",

author = "Park, {Eung Ryul} and Jang, {Hyuk Kyoo} and Kang, {Eung Kil} and Lee, {Cheol Eui}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (M202AK010021-04A1101-02110 and National Research Laboratory) and by the Korea Research Foundation (Grant No. KRF-2004-005-C00060 and Brain Korea 21 Project in 2005). Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2006",

month = mar,

day = "9",

doi = "10.1016/j.materresbull.2005.09.010",

language = "English",

volume = "41",

pages = "536--540",

journal = "Materials Research Bulletin",

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T1 - Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films

AU - Park, Eung Ryul

AU - Jang, Hyuk Kyoo

AU - Kang, Eung Kil

AU - Lee, Cheol Eui

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (M202AK010021-04A1101-02110 and National Research Laboratory) and by the Korea Research Foundation (Grant No. KRF-2004-005-C00060 and Brain Korea 21 Project in 2005). Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006/3/9

Y1 - 2006/3/9

N2 - Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol-gel-derived Pb(Zrx,Ti1-x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450-°C. Subsequent RF oxygen-plasma treatment at 200 and 300-°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15-μC/cm2.

AB - Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol-gel-derived Pb(Zrx,Ti1-x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450-°C. Subsequent RF oxygen-plasma treatment at 200 and 300-°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15-μC/cm2.

KW - A. Thin films

KW - B. Epitaxial growth

KW - C. Photoelectron spectroscopy

KW - D. Ferroelectricity

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U2 - 10.1016/j.materresbull.2005.09.010

DO - 10.1016/j.materresbull.2005.09.010

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SN - 0025-5408

VL - 41

SP - 536

EP - 540

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 3

ER -

Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films

Abstract

Keywords

ASJC Scopus subject areas

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