Abstract
Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol-gel-derived Pb(Zrx,Ti1-x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450-°C. Subsequent RF oxygen-plasma treatment at 200 and 300-°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15-μC/cm2.
Original language | English |
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Pages (from-to) | 536-540 |
Number of pages | 5 |
Journal | Materials Research Bulletin |
Volume | 41 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2006 Mar 9 |
Bibliographical note
Funding Information:This work was supported by the Korea Science and Engineering Foundation (M202AK010021-04A1101-02110 and National Research Laboratory) and by the Korea Research Foundation (Grant No. KRF-2004-005-C00060 and Brain Korea 21 Project in 2005).
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
Keywords
- A. Thin films
- B. Epitaxial growth
- C. Photoelectron spectroscopy
- D. Ferroelectricity
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering