Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films

Eung Ryul Park; Hyuk Kyoo Jang; Eung Kil Kang; Cheol Eui Lee

doi:10.1016/j.materresbull.2005.09.010

Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films

Eung Ryul Park, Hyuk Kyoo Jang, Eung Kil Kang, Cheol Eui Lee

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol-gel-derived Pb(Zrx,Ti1-x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450-°C. Subsequent RF oxygen-plasma treatment at 200 and 300-°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15-μC/cm².

Original language	English
Pages (from-to)	536-540
Number of pages	5
Journal	Materials Research Bulletin
Volume	41
Issue number	3
DOIs	https://doi.org/10.1016/j.materresbull.2005.09.010
Publication status	Published - 2006 Mar 9

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (M202AK010021-04A1101-02110 and National Research Laboratory) and by the Korea Research Foundation (Grant No. KRF-2004-005-C00060 and Brain Korea 21 Project in 2005).

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

A. Thin films
B. Epitaxial growth
C. Photoelectron spectroscopy
D. Ferroelectricity

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.materresbull.2005.09.010

Cite this

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title = "Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films",

abstract = "Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol-gel-derived Pb(Zrx,Ti1-x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450-°C. Subsequent RF oxygen-plasma treatment at 200 and 300-°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15-μC/cm2.",

keywords = "A. Thin films, B. Epitaxial growth, C. Photoelectron spectroscopy, D. Ferroelectricity",

author = "Park, {Eung Ryul} and Jang, {Hyuk Kyoo} and Kang, {Eung Kil} and Lee, {Cheol Eui}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (M202AK010021-04A1101-02110 and National Research Laboratory) and by the Korea Research Foundation (Grant No. KRF-2004-005-C00060 and Brain Korea 21 Project in 2005). Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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doi = "10.1016/j.materresbull.2005.09.010",

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volume = "41",

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AU - Park, Eung Ryul

AU - Jang, Hyuk Kyoo

AU - Kang, Eung Kil

AU - Lee, Cheol Eui

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (M202AK010021-04A1101-02110 and National Research Laboratory) and by the Korea Research Foundation (Grant No. KRF-2004-005-C00060 and Brain Korea 21 Project in 2005). Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006/3/9

Y1 - 2006/3/9

N2 - Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol-gel-derived Pb(Zrx,Ti1-x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450-°C. Subsequent RF oxygen-plasma treatment at 200 and 300-°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15-μC/cm2.

AB - Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol-gel-derived Pb(Zrx,Ti1-x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450-°C. Subsequent RF oxygen-plasma treatment at 200 and 300-°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15-μC/cm2.

KW - A. Thin films

KW - B. Epitaxial growth

KW - C. Photoelectron spectroscopy

KW - D. Ferroelectricity

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U2 - 10.1016/j.materresbull.2005.09.010

DO - 10.1016/j.materresbull.2005.09.010

M3 - Article

AN - SCOPUS:32644440106

SN - 0025-5408

VL - 41

SP - 536

EP - 540

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 3

ER -

Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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