Oxygen-plasma treatment of sol-gel derived lead zirconate titanate thin films

Cheol Eui Lee; H. K. Jang; E. R. Park; E. K. Kang; S. K. Lee; S. J. Noh

doi:10.1080/713716066

Oxygen-plasma treatment of sol-gel derived lead zirconate titanate thin films

Cheol Eui Lee, H. K. Jang, E. R. Park, E. K. Kang, S. K. Lee, S. J. Noh

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Oxygen-plasma treatment has been introduced for improving electrical characteristics and low-temperature processing of sol-gel derived Pb(Zr x , Ti l - x )O 3 (PZT) thin films. The ferroelectric PZT films with room temperature oxygen-plasma treatment showed enhanced polarization and decreased leakage current densities, as well as much reduced electrical fatigues. Besides, oxygen-plasma treatment at 200C, following a low-temperature annealing in oxygen at 450C, gave rise to ferroelectric hysteresis loops, which was explained by the perovskite phase formation starting from the surface layers.

Original language	English
Pages (from-to)	123-128
Number of pages	6
Journal	Ferroelectrics
Volume	269
DOIs	https://doi.org/10.1080/713716066
Publication status	Published - 2002 Jan 1

Keywords

Fatigue
Low-temperature processing
Oxygen-plasma
PZT
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/713716066

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@article{f5260a0ea297451eb30a31c26dc2ff16,

title = "Oxygen-plasma treatment of sol-gel derived lead zirconate titanate thin films",

abstract = "Oxygen-plasma treatment has been introduced for improving electrical characteristics and low-temperature processing of sol-gel derived Pb(Zr x , Ti l - x )O 3 (PZT) thin films. The ferroelectric PZT films with room temperature oxygen-plasma treatment showed enhanced polarization and decreased leakage current densities, as well as much reduced electrical fatigues. Besides, oxygen-plasma treatment at 200C, following a low-temperature annealing in oxygen at 450C, gave rise to ferroelectric hysteresis loops, which was explained by the perovskite phase formation starting from the surface layers.",

keywords = "Fatigue, Low-temperature processing, Oxygen-plasma, PZT, Thin films",

author = "Lee, {Cheol Eui} and Jang, {H. K.} and Park, {E. R.} and Kang, {E. K.} and Lee, {S. K.} and Noh, {S. J.}",

year = "2002",

month = jan,

day = "1",

doi = "10.1080/713716066",

language = "English",

volume = "269",

pages = "123--128",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Oxygen-plasma treatment of sol-gel derived lead zirconate titanate thin films

AU - Lee, Cheol Eui

AU - Jang, H. K.

AU - Park, E. R.

AU - Kang, E. K.

AU - Lee, S. K.

AU - Noh, S. J.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Oxygen-plasma treatment has been introduced for improving electrical characteristics and low-temperature processing of sol-gel derived Pb(Zr x , Ti l - x )O 3 (PZT) thin films. The ferroelectric PZT films with room temperature oxygen-plasma treatment showed enhanced polarization and decreased leakage current densities, as well as much reduced electrical fatigues. Besides, oxygen-plasma treatment at 200C, following a low-temperature annealing in oxygen at 450C, gave rise to ferroelectric hysteresis loops, which was explained by the perovskite phase formation starting from the surface layers.

AB - Oxygen-plasma treatment has been introduced for improving electrical characteristics and low-temperature processing of sol-gel derived Pb(Zr x , Ti l - x )O 3 (PZT) thin films. The ferroelectric PZT films with room temperature oxygen-plasma treatment showed enhanced polarization and decreased leakage current densities, as well as much reduced electrical fatigues. Besides, oxygen-plasma treatment at 200C, following a low-temperature annealing in oxygen at 450C, gave rise to ferroelectric hysteresis loops, which was explained by the perovskite phase formation starting from the surface layers.

KW - Fatigue

KW - Low-temperature processing

KW - Oxygen-plasma

KW - PZT

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=33746278090&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746278090&partnerID=8YFLogxK

U2 - 10.1080/713716066

DO - 10.1080/713716066

M3 - Article

AN - SCOPUS:33746278090

SN - 0015-0193

VL - 269

SP - 123

EP - 128

JO - Ferroelectrics

JF - Ferroelectrics

ER -

Oxygen-plasma treatment of sol-gel derived lead zirconate titanate thin films

Abstract

Keywords

ASJC Scopus subject areas

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