Abstract
Oxygen-plasma treatment has been introduced for improving electrical characteristics and low-temperature processing of sol-gel derived Pb(Zr x , Ti l - x )O 3 (PZT) thin films. The ferroelectric PZT films with room temperature oxygen-plasma treatment showed enhanced polarization and decreased leakage current densities, as well as much reduced electrical fatigues. Besides, oxygen-plasma treatment at 200C, following a low-temperature annealing in oxygen at 450C, gave rise to ferroelectric hysteresis loops, which was explained by the perovskite phase formation starting from the surface layers.
Original language | English |
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Pages (from-to) | 123-128 |
Number of pages | 6 |
Journal | Ferroelectrics |
Volume | 269 |
DOIs | |
Publication status | Published - 2002 Jan 1 |
Keywords
- Fatigue
- Low-temperature processing
- Oxygen-plasma
- PZT
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics