p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si

Hyun Yong Yu, Masato Ishibashi, Jin Hong Park, Masaharu Kobayashi, Krishna C. Saraswat

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)


We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode. Fabricated devices show ∼80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.

Original languageEnglish
Pages (from-to)675-677
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - 2009
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received February 23, 2009; revised March 22, 2009. Current version published May 27, 2009. This work was supported in part by MARCO Interconnect Focus Centers and in part by the Stanford University INMP program. The review of this letter was arranged by Editor M. Ostling.


  • Anneal
  • Dislocation
  • Germanium
  • Heteroepitaxy
  • Hydrogen
  • Selective growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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