P-n homo-junction arrays of aligned single walled carbon nanotubes fabricated by selective patterning of polyethyleneimine film

Jaehyun Park, Jangyeol Yoon, Gyu Tae Kim, Jeong Sook Ha

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    We describe the fabrication and electrical performance of p-n homo-junction diode arrays of horizontally aligned single walled carbon nanotubes (SWCNTs). Horizontally aligned SWCNTs grown on stable temperature-cut quartz with a density of ∼ 6 SWCNTs νm- 1 were transferred onto a SiO 2/Si substrate. After the electrical breakdown, aligned SWCNT field effect transistors (FETs) showed unipolar p-type characteristics with a large current on/off ratio of 106 at 1V and a hole mobility per tube of 1500cm2V- 1s- 1. Spin-coating of polyethyleneimine (PEI) onto p-type SWCNT FETs showed the n-type transfer characteristics. Patterning of spin-coated PEI film enabled the fabrication of p-n homo-junction arrays of aligned SWCNTs in an easy way, where the rectifying behavior was observed with a rectification ratio of ∼ 104 at 2V. A comparative study with a p-n homo-junction of random networks of SWCNTs confirmed the advantage of aligned SWCNTs for applications in high performance electronic devices.

    Original languageEnglish
    Article number385302
    JournalNanotechnology
    Volume22
    Issue number38
    DOIs
    Publication statusPublished - 2011 Sept 23

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • General Materials Science
    • Mechanics of Materials
    • Mechanical Engineering
    • Electrical and Electronic Engineering

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