We describe the fabrication and electrical performance of p-n homo-junction diode arrays of horizontally aligned single walled carbon nanotubes (SWCNTs). Horizontally aligned SWCNTs grown on stable temperature-cut quartz with a density of ∼ 6 SWCNTs νm- 1 were transferred onto a SiO 2/Si substrate. After the electrical breakdown, aligned SWCNT field effect transistors (FETs) showed unipolar p-type characteristics with a large current on/off ratio of 106 at 1V and a hole mobility per tube of 1500cm2V- 1s- 1. Spin-coating of polyethyleneimine (PEI) onto p-type SWCNT FETs showed the n-type transfer characteristics. Patterning of spin-coated PEI film enabled the fabrication of p-n homo-junction arrays of aligned SWCNTs in an easy way, where the rectifying behavior was observed with a rectification ratio of ∼ 104 at 2V. A comparative study with a p-n homo-junction of random networks of SWCNTs confirmed the advantage of aligned SWCNTs for applications in high performance electronic devices.
|Publication status||Published - 2011 Sept 23|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering