Parameter modeling for nanopore Ionic field effect Transistors in 3-D device simulation

Jun Mo Park; Honggu Chun; Y. Eugene Pak; Byung Gook Park; Jong Ho Lee

doi:10.1166/jnn.2014.9906

Parameter modeling for nanopore Ionic field effect Transistors in 3-D device simulation

Jun Mo Park
, Honggu Chun
, Y. Eugene Pak
, Byung Gook Park
, Jong Ho Lee^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

An Ion Field Effect Transistor (IFET) with nanopore structure was modeled in a conventional 3-dimensional (3-D) device simulator to understand current-voltage (I -V ) characteristics and underlying physics of the device. Since the nanopore was filled with positive ions (K⁺) ions due to the negative interface charge on the insulator surface and negative gate bias condition, we could successfully simulate the IFET structure using modified p -type silicon to mimic KCl solution. We used p -type silicon with a doping concentration of 6.022 × 10¹⁶ cm^-3 which has the same concentration of positive carriers (hole) as in 10^-4 M KCl. By controlling gate electric field effect on the mobility, the I -V curves obtained by the parameter modeling matched very well with the measured data. In addition, the decrease of |V_th| with increasing V_DS was physically analyzed,.

Original language	English
Pages (from-to)	8171-8175
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	11
DOIs	https://doi.org/10.1166/jnn.2014.9906
Publication status	Published - 2014 Nov 1

ASJC Scopus subject areas

Condensed Matter Physics
General Chemistry
General Materials Science
Bioengineering
Biomedical Engineering

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10.1166/jnn.2014.9906

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@article{45f1f04130a648d585cb9153de94b3ba,

title = "Parameter modeling for nanopore Ionic field effect Transistors in 3-D device simulation",

abstract = "An Ion Field Effect Transistor (IFET) with nanopore structure was modeled in a conventional 3-dimensional (3-D) device simulator to understand current-voltage (I -V ) characteristics and underlying physics of the device. Since the nanopore was filled with positive ions (K+) ions due to the negative interface charge on the insulator surface and negative gate bias condition, we could successfully simulate the IFET structure using modified p -type silicon to mimic KCl solution. We used p -type silicon with a doping concentration of 6.022 × 1016 cm-3 which has the same concentration of positive carriers (hole) as in 10-4 M KCl. By controlling gate electric field effect on the mobility, the I -V curves obtained by the parameter modeling matched very well with the measured data. In addition, the decrease of |Vth| with increasing VDS was physically analyzed,.",

keywords = "3-d device simulation, Ionic field effect transistor (ifet), Mobility, Nanopore structure, Parameter modeling",

author = "Park, \{Jun Mo\} and Honggu Chun and \{Eugene Pak\}, Y. and Park, \{Byung Gook\} and Lee, \{Jong Ho\}",

year = "2014",

month = nov,

day = "1",

doi = "10.1166/jnn.2014.9906",

language = "English",

volume = "14",

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journal = "Journal of Nanoscience and Nanotechnology",

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publisher = "American Scientific Publishers",

number = "11",

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TY - JOUR

T1 - Parameter modeling for nanopore Ionic field effect Transistors in 3-D device simulation

AU - Park, Jun Mo

AU - Chun, Honggu

AU - Eugene Pak, Y.

AU - Park, Byung Gook

AU - Lee, Jong Ho

PY - 2014/11/1

Y1 - 2014/11/1

N2 - An Ion Field Effect Transistor (IFET) with nanopore structure was modeled in a conventional 3-dimensional (3-D) device simulator to understand current-voltage (I -V ) characteristics and underlying physics of the device. Since the nanopore was filled with positive ions (K+) ions due to the negative interface charge on the insulator surface and negative gate bias condition, we could successfully simulate the IFET structure using modified p -type silicon to mimic KCl solution. We used p -type silicon with a doping concentration of 6.022 × 1016 cm-3 which has the same concentration of positive carriers (hole) as in 10-4 M KCl. By controlling gate electric field effect on the mobility, the I -V curves obtained by the parameter modeling matched very well with the measured data. In addition, the decrease of |Vth| with increasing VDS was physically analyzed,.

AB - An Ion Field Effect Transistor (IFET) with nanopore structure was modeled in a conventional 3-dimensional (3-D) device simulator to understand current-voltage (I -V ) characteristics and underlying physics of the device. Since the nanopore was filled with positive ions (K+) ions due to the negative interface charge on the insulator surface and negative gate bias condition, we could successfully simulate the IFET structure using modified p -type silicon to mimic KCl solution. We used p -type silicon with a doping concentration of 6.022 × 1016 cm-3 which has the same concentration of positive carriers (hole) as in 10-4 M KCl. By controlling gate electric field effect on the mobility, the I -V curves obtained by the parameter modeling matched very well with the measured data. In addition, the decrease of |Vth| with increasing VDS was physically analyzed,.

KW - 3-d device simulation

KW - Ionic field effect transistor (ifet)

KW - Mobility

KW - Nanopore structure

KW - Parameter modeling

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UR - https://www.scopus.com/pages/publications/84908519431#tab=citedBy

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DO - 10.1166/jnn.2014.9906

M3 - Article

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SN - 1533-4880

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EP - 8175

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

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ER -

Parameter modeling for nanopore Ionic field effect Transistors in 3-D device simulation

Abstract

ASJC Scopus subject areas

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