Abstract
In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.
| Original language | English |
|---|---|
| Pages (from-to) | 581-583 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 28 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2007 Jul |
Bibliographical note
Funding Information:Manuscript received March 14, 2007; revised May 2, 2007. This work was supported by the Intelligent Microsystem Center, which carries out one of the Twenty-First Century’s Frontier R&D Projects sponsored by the Korea Ministry of Commerce, Industry and Energy and Korea Institute of Science and Technology grants. The review of this letter was arranged by Editor P. Yu.
Keywords
- Biosensors
- Bipolar junction transistor (BJT)
- Fluorescence
- MOSFET
- Microfluidic
- Photodiode
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering