TY - GEN
T1 - Patterning of the self-assembled monolayer using the zero residual nano-imprint lithography
AU - Yang, Ki Yeon
AU - Kim, Jong Woo
AU - Hong, Sung Hoon
AU - Lee, Heon
PY - 2007
Y1 - 2007
N2 - Self-Assembled Monolayer (SAM) is a single layer of ordered molecules absorbed on a surface by chemical bonding between the molecular head group and the surface. The surface properties can be controlled by the terminal functional group of the SAM layer. In order to utilize SAM layers for device applications, SAM layer needs to be patterned as a sub-micron size. Patterning of SAM layer in sub-micron size has been done by various techniques including direct-writing by dip-pen nano lithography, selective etching with UV photons, and selective deposition of SAM layer by n-contact printing. In this study, silane based SAM layer was patterned to the sub-micron size using zero residual Nano imprint Lithography, which is regarded as next generation lithography technique due to its simplicity, high throughput and high resolution pattern transferring capability. Using zero-residual layer imprinting, 300nm-2um sized SAM patterns can successfully fabricated. In order to check the surface property of patterned SAM layer, a solution containing nano Ag particles was spin-coated on the SAM patterned substrate and nano Ag particles were selectively deposited on the substrate.
AB - Self-Assembled Monolayer (SAM) is a single layer of ordered molecules absorbed on a surface by chemical bonding between the molecular head group and the surface. The surface properties can be controlled by the terminal functional group of the SAM layer. In order to utilize SAM layers for device applications, SAM layer needs to be patterned as a sub-micron size. Patterning of SAM layer in sub-micron size has been done by various techniques including direct-writing by dip-pen nano lithography, selective etching with UV photons, and selective deposition of SAM layer by n-contact printing. In this study, silane based SAM layer was patterned to the sub-micron size using zero residual Nano imprint Lithography, which is regarded as next generation lithography technique due to its simplicity, high throughput and high resolution pattern transferring capability. Using zero-residual layer imprinting, 300nm-2um sized SAM patterns can successfully fabricated. In order to check the surface property of patterned SAM layer, a solution containing nano Ag particles was spin-coated on the SAM patterned substrate and nano Ag particles were selectively deposited on the substrate.
KW - Nano imprint lithography
KW - Patterning SAMs
KW - Zero residual layer imprinting
UR - http://www.scopus.com/inward/record.url?scp=38549179474&partnerID=8YFLogxK
U2 - 10.4028/3-908451-31-0.523
DO - 10.4028/3-908451-31-0.523
M3 - Conference contribution
AN - SCOPUS:38549179474
SN - 3908451310
SN - 9783908451310
T3 - Solid State Phenomena
SP - 523
EP - 526
BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PB - Trans Tech Publications Ltd
T2 - IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Y2 - 10 September 2006 through 14 September 2006
ER -