Patterning Superatom Dopants on Transition Metal Dichalcogenides

Jaeeun Yu, Chul Ho Lee, Delphine Bouilly, Minyong Han, Philip Kim, Michael L. Steigerwald, Xavier Roy, Colin Nuckolls

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)

Abstract

This study describes a new and simple approach to dope two-dimensional transition metal dichalcogenides (TMDCs) using the superatom Co6Se8(PEt3)6 as the electron dopant. Semiconducting TMDCs are wired into field-effect transistor devices and then immersed into a solution of these superatoms. The degree of doping is determined by the concentration of the superatoms in solution and by the length of time the films are immersed in the dopant solution. Using this chemical approach, we are able to turn mono- and few-layer MoS2 samples from moderately to heavily electron-doped states. The same approach applied on WSe2 films changes their characteristics from hole transporting to electron transporting. Moreover, we show that the superatom doping can be patterned on specific areas of TMDC films. To illustrate the power of this technique, we demonstrate the fabrication of a lateral p-n junction by selectively doping only a portion of the channel in a WSe2 device. Finally, encapsulation of the doped films with crystalline hydrocarbon layers stabilizes their properties in an ambient environment.

Original languageEnglish
Pages (from-to)3385-3389
Number of pages5
JournalNano Letters
Volume16
Issue number5
DOIs
Publication statusPublished - 2016 May 11

Bibliographical note

Funding Information:
Funding for this research was provided by the Center for Precision Assembly of Superstratic and Superatomic Solids, an NSF MRSEC (Award Number DMR-1420634), by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and by the Air Force Office of Scientific Research (Award Number FA9550-14-1-0381). Use of the Shared Materials Characterization Laboratory (SMCL) and Nanofabrication Laboratory (NFL) made possible by funding from Columbia University. J.Y. thanks the Kwanjeong Educational Foundation for support. C.-H.L. acknowledges the support from Basic Science Research Program (NRF-2014R1A1A2055112) through the National Research Foundation (NRF) funded by the Korean Government Ministry of Education. D.B. was supported by a Banting postdoctoral fellowship from the Natural Sciences and Engineering Research Council of Canada (NSERC) and by a postdoctoral fellowship from Fonds de Recherche du Que?bec?Nature et technologies (FRQNT).

Publisher Copyright:
© 2016 American Chemical Society.

Keywords

  • Transition metal dichalcogenide
  • chemical doping
  • encapsulation
  • lateral junction
  • superatom

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering

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