Peak channel temperature of graphene-based transistors

In this study, graphene was mechanically deposited on SiO ₂/Si substrate, followed by ohmic metallization using electron-beam lithography. Finite element analysis was employed to characterize the operating temperature of graphene-based devices using the experimentally determined currentvoltage data. The temperature of the hottest spot where the underlying SiO ₂ layer was 300 nm thick was elevated up to about 70 °C at a 10 mW dissipated power. However, the operating temperature dropped to about 50 °C when the 300 nm thick SiO ₂ layer was replaced with a 20 nm thick SiO ₂ layer. Thermal management is very critical in the reliability of graphene-based high speed electronic devices because the high operating temperature can degrade the device performance.