Abstract
4H-SiC samples irradiated with high energy protons were probed by low temperature photoluminescence (PL) and room temperature micro-Raman scattering spectroscopies. The quench of the near band-edge emission and the presence of a number of new sharp lines in the luminescence spectra of the proton-irradiated samples confirm the formation of various new defects. The changes of the line-shape and peak position of the longitudinal optical phonon-plasmon coupled (LOPC) mode in 4H-SiC are consistent with the decrease in the free carrier concentrations due to the introduction of carrier traps induced by the high energy proton irradiation. The estimated penetration depths for 6 and 8 MeV energy proton were 180 μm and 300 μm, respectively, which are in good agreement with the Monte Carlo numerical simulation results. At the 180 μm and 300 μm depths, the carrier concentrations were reduced by approximately 34% and 21%, respectively.
Original language | English |
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Pages (from-to) | 44-48 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 270 |
DOIs | |
Publication status | Published - 2013 Apr 1 |
Bibliographical note
Funding Information:The work at Korea University was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (no. 20104010100640 ) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (grant no. 2012R1A1A2042761 ).
Keywords
- 4H-SiC
- Proton irradiation
- Raman spectroscopy
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- General Physics and Astronomy
- Surfaces and Interfaces
- Surfaces, Coatings and Films