Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopy

Hong Yeol Kim; Jihyun Kim; Jaime A. Freitas

doi:10.1016/j.apsusc.2012.12.014

Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopy

Hong Yeol Kim, Jihyun Kim, Jaime A. Freitas

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

4H-SiC samples irradiated with high energy protons were probed by low temperature photoluminescence (PL) and room temperature micro-Raman scattering spectroscopies. The quench of the near band-edge emission and the presence of a number of new sharp lines in the luminescence spectra of the proton-irradiated samples confirm the formation of various new defects. The changes of the line-shape and peak position of the longitudinal optical phonon-plasmon coupled (LOPC) mode in 4H-SiC are consistent with the decrease in the free carrier concentrations due to the introduction of carrier traps induced by the high energy proton irradiation. The estimated penetration depths for 6 and 8 MeV energy proton were 180 μm and 300 μm, respectively, which are in good agreement with the Monte Carlo numerical simulation results. At the 180 μm and 300 μm depths, the carrier concentrations were reduced by approximately 34% and 21%, respectively.

Original language	English
Pages (from-to)	44-48
Number of pages	5
Journal	Applied Surface Science
Volume	270
DOIs	https://doi.org/10.1016/j.apsusc.2012.12.014
Publication status	Published - 2013 Apr 1

Bibliographical note

Funding Information:
The work at Korea University was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (no. 20104010100640 ) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (grant no. 2012R1A1A2042761 ).

Keywords

4H-SiC
Proton irradiation
Raman spectroscopy

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2012.12.014

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@article{0957da2b1fea4cfb8103292315b24e96,

title = "Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopy",

abstract = "4H-SiC samples irradiated with high energy protons were probed by low temperature photoluminescence (PL) and room temperature micro-Raman scattering spectroscopies. The quench of the near band-edge emission and the presence of a number of new sharp lines in the luminescence spectra of the proton-irradiated samples confirm the formation of various new defects. The changes of the line-shape and peak position of the longitudinal optical phonon-plasmon coupled (LOPC) mode in 4H-SiC are consistent with the decrease in the free carrier concentrations due to the introduction of carrier traps induced by the high energy proton irradiation. The estimated penetration depths for 6 and 8 MeV energy proton were 180 μm and 300 μm, respectively, which are in good agreement with the Monte Carlo numerical simulation results. At the 180 μm and 300 μm depths, the carrier concentrations were reduced by approximately 34% and 21%, respectively.",

keywords = "4H-SiC, Proton irradiation, Raman spectroscopy",

author = "Kim, {Hong Yeol} and Jihyun Kim and Freitas, {Jaime A.}",

note = "Funding Information: The work at Korea University was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (no. 20104010100640 ) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (grant no. 2012R1A1A2042761 ).",

year = "2013",

month = apr,

day = "1",

doi = "10.1016/j.apsusc.2012.12.014",

language = "English",

volume = "270",

pages = "44--48",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopy

AU - Kim, Hong Yeol

AU - Kim, Jihyun

AU - Freitas, Jaime A.

N1 - Funding Information: The work at Korea University was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (no. 20104010100640 ) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (grant no. 2012R1A1A2042761 ).

PY - 2013/4/1

Y1 - 2013/4/1

N2 - 4H-SiC samples irradiated with high energy protons were probed by low temperature photoluminescence (PL) and room temperature micro-Raman scattering spectroscopies. The quench of the near band-edge emission and the presence of a number of new sharp lines in the luminescence spectra of the proton-irradiated samples confirm the formation of various new defects. The changes of the line-shape and peak position of the longitudinal optical phonon-plasmon coupled (LOPC) mode in 4H-SiC are consistent with the decrease in the free carrier concentrations due to the introduction of carrier traps induced by the high energy proton irradiation. The estimated penetration depths for 6 and 8 MeV energy proton were 180 μm and 300 μm, respectively, which are in good agreement with the Monte Carlo numerical simulation results. At the 180 μm and 300 μm depths, the carrier concentrations were reduced by approximately 34% and 21%, respectively.

AB - 4H-SiC samples irradiated with high energy protons were probed by low temperature photoluminescence (PL) and room temperature micro-Raman scattering spectroscopies. The quench of the near band-edge emission and the presence of a number of new sharp lines in the luminescence spectra of the proton-irradiated samples confirm the formation of various new defects. The changes of the line-shape and peak position of the longitudinal optical phonon-plasmon coupled (LOPC) mode in 4H-SiC are consistent with the decrease in the free carrier concentrations due to the introduction of carrier traps induced by the high energy proton irradiation. The estimated penetration depths for 6 and 8 MeV energy proton were 180 μm and 300 μm, respectively, which are in good agreement with the Monte Carlo numerical simulation results. At the 180 μm and 300 μm depths, the carrier concentrations were reduced by approximately 34% and 21%, respectively.

KW - 4H-SiC

KW - Proton irradiation

KW - Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=84875221522&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2012.12.014

DO - 10.1016/j.apsusc.2012.12.014

M3 - Article

AN - SCOPUS:84875221522

SN - 0169-4332

VL - 270

SP - 44

EP - 48

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopy

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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