Keyphrases
Proton
100%
Depth Profiling
100%
Micro-Raman Spectroscopy
100%
4H-SiC
100%
Penetration Depth
100%
Mode Coupling
33%
Room Temperature
33%
Numerical Simulation Results
33%
Carrier Concentration
33%
Free Carrier Concentration
33%
Near-band-edge Emission
33%
Peak Position
33%
Carrier Trapping
33%
Line Shape
33%
Low-temperature Photoluminescence
33%
High-energy Proton Irradiation
33%
Irradiated Sample
33%
New Defects
33%
Longitudinal Optical Phonons
33%
Raman Scattering Spectroscopy
33%
Plasmon
33%
Monte Carlo numerical Simulation
33%
Micro-Raman Scattering
33%
High-energy Protons
33%
Luminescence Spectra
33%
Chemistry
Ambient Reaction Temperature
100%
Photoluminescence
100%
Plasmon
100%
Computer Simulation
100%
Micro-Raman Spectroscopy
100%
Lineshape
100%
LO Phonon
100%
Depth Profiling
100%
Luminiscence Spectrum
100%
formation
100%
Raman Spectrometry
100%
Engineering
Penetration Depth
100%
Carrier Concentration
100%
Simulation Result
50%
Low-Temperature
50%
Room Temperature
50%
Good Agreement
50%
Band Edge
50%
Line Shape
50%
Proton Energy
50%
Optical Phonon
50%
Computer Simulation
50%
Raman Spectra
50%
Material Science
Carrier Concentration
100%
Micro-Raman Spectroscopy
100%
Photoluminescence
50%
Luminescence
50%
Lineshape
50%
Proton Irradiation
50%