Penetration effects of high-energy protons in GaN: A micro-raman spectroscopy study

Hong Yeol Kim, Jaime A. Freitas, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Micro-Raman spectroscopy was used to examine changes of the structural and electrical properties of GaN templates submitted to high-energy proton irradiation. The locations of larger structurally damaged regions, for each proton irradiation condition, were determined by monitoring the variations of the quasilongitudinal optical phonon frequency. We observed that protons generated defect clusters, through collisions with lattice atoms, and act as carrier traps. The experimental results showed a reduction of the carrier concentrations around the estimated penetration depths for specific proton energies, which are in good agreement with the numerical simulation results. The proton-induced damage was partially healed by a thermal annealing treatment at 900°C.

Original languageEnglish
Pages (from-to)H5-H8
JournalElectrochemical and Solid-State Letters
Issue number1
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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