Abstract
We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (Ion/off), and the dc conductivity (σdc) were measured as a function of various weight (wt.%) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect Ion/off increased rapidly for TF-FETs with a wt.% of t-MWCNTs below 0.6. For the TF-FETs with a wt.% of t-MWCNT above 0.6, the Ion/off was relatively low. From the measured σdc as a function of the wt.% of t-MWCNTs, the percolation threshold (pc) was observed to be approximately 0.6 wt.% for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the pc for the charge conduction of the t-MWCNTs composites.
Original language | English |
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Pages (from-to) | 2034-2037 |
Number of pages | 4 |
Journal | Synthetic Metals |
Volume | 159 |
Issue number | 19-20 |
DOIs | |
Publication status | Published - 2009 Oct |
Bibliographical note
Funding Information:This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0083096).
Keywords
- Carbon nanotubes composite
- Conductivity
- Field-effect transistor
- Percolation threshold
- Thin multi-walled carbon nanotubes
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry