Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites

Sang Won Bae; Kihyun Kim; Yoon Deok Han; Sung Hwan Kim; Jinsoo Joo; Ji Hoon Choi; Cheol Jin Lee

doi:10.1016/j.synthmet.2009.07.017

Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites

Sang Won Bae, Kihyun Kim, Yoon Deok Han, Sung Hwan Kim, Jinsoo Joo, Ji Hoon Choi, Cheol Jin Lee

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (I_on/off), and the dc conductivity (σ_dc) were measured as a function of various weight (wt.%) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect I_on/off increased rapidly for TF-FETs with a wt.% of t-MWCNTs below 0.6. For the TF-FETs with a wt.% of t-MWCNT above 0.6, the I_on/off was relatively low. From the measured σ_dc as a function of the wt.% of t-MWCNTs, the percolation threshold (p_c) was observed to be approximately 0.6 wt.% for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the p_c for the charge conduction of the t-MWCNTs composites.

Original language	English
Pages (from-to)	2034-2037
Number of pages	4
Journal	Synthetic Metals
Volume	159
Issue number	19-20
DOIs	https://doi.org/10.1016/j.synthmet.2009.07.017
Publication status	Published - 2009 Oct

Keywords

Carbon nanotubes composite
Conductivity
Field-effect transistor
Percolation threshold
Thin multi-walled carbon nanotubes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.synthmet.2009.07.017

Cite this

@article{c9cec9b6fc994ee5acff6ae8ffa6d2a3,

title = "Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites",

abstract = "We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (Ion/off), and the dc conductivity (σdc) were measured as a function of various weight (wt.%) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect Ion/off increased rapidly for TF-FETs with a wt.% of t-MWCNTs below 0.6. For the TF-FETs with a wt.% of t-MWCNT above 0.6, the Ion/off was relatively low. From the measured σdc as a function of the wt.% of t-MWCNTs, the percolation threshold (pc) was observed to be approximately 0.6 wt.% for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the pc for the charge conduction of the t-MWCNTs composites.",

keywords = "Carbon nanotubes composite, Conductivity, Field-effect transistor, Percolation threshold, Thin multi-walled carbon nanotubes",

author = "Bae, {Sang Won} and Kihyun Kim and Han, {Yoon Deok} and Kim, {Sung Hwan} and Jinsoo Joo and Choi, {Ji Hoon} and Lee, {Cheol Jin}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0083096).",

year = "2009",

month = oct,

doi = "10.1016/j.synthmet.2009.07.017",

language = "English",

volume = "159",

pages = "2034--2037",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "19-20",

}

TY - JOUR

T1 - Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites

AU - Bae, Sang Won

AU - Kim, Kihyun

AU - Han, Yoon Deok

AU - Kim, Sung Hwan

AU - Joo, Jinsoo

AU - Choi, Ji Hoon

AU - Lee, Cheol Jin

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0083096).

PY - 2009/10

Y1 - 2009/10

N2 - We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (Ion/off), and the dc conductivity (σdc) were measured as a function of various weight (wt.%) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect Ion/off increased rapidly for TF-FETs with a wt.% of t-MWCNTs below 0.6. For the TF-FETs with a wt.% of t-MWCNT above 0.6, the Ion/off was relatively low. From the measured σdc as a function of the wt.% of t-MWCNTs, the percolation threshold (pc) was observed to be approximately 0.6 wt.% for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the pc for the charge conduction of the t-MWCNTs composites.

AB - We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (Ion/off), and the dc conductivity (σdc) were measured as a function of various weight (wt.%) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect Ion/off increased rapidly for TF-FETs with a wt.% of t-MWCNTs below 0.6. For the TF-FETs with a wt.% of t-MWCNT above 0.6, the Ion/off was relatively low. From the measured σdc as a function of the wt.% of t-MWCNTs, the percolation threshold (pc) was observed to be approximately 0.6 wt.% for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the pc for the charge conduction of the t-MWCNTs composites.

KW - Carbon nanotubes composite

KW - Conductivity

KW - Field-effect transistor

KW - Percolation threshold

KW - Thin multi-walled carbon nanotubes

UR - http://www.scopus.com/inward/record.url?scp=70349501601&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2009.07.017

DO - 10.1016/j.synthmet.2009.07.017

M3 - Article

AN - SCOPUS:70349501601

SN - 0379-6779

VL - 159

SP - 2034

EP - 2037

JO - Synthetic Metals

JF - Synthetic Metals

IS - 19-20

ER -

Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this