TY - GEN
T1 - Performance analysis and design of FET-embedded capacitive micromachined ultrasonic transducer (CMUT)
AU - Jung, Seung Geun
AU - Kim, Jinsik
AU - Hwang, Kyo Seon
AU - Yu, Hyun Yong
AU - Lee, Byung Chul
N1 - Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 2016/11/1
Y1 - 2016/11/1
N2 - In this paper, we present design guideline and simulation results of capacitive micromachined ultrasonic transducer (CMUT) embedded field effect transistor (FET) for high frequency mode operation. The CMUT-FET consists of a mechanical CMUT part and an electrical sensing FET part. The device has a characteristic of a shared gate dielectric between a CMUT and an FET; hence, the gate capacitance change in the CMUT part can be reflected to the FET current as pressure changes. With an FET's current amplifying characteristic, the CMUT-FET makes it possible to achieve higher sensitivity and high resonant frequency with smaller element pitch and smaller active cell area than existing CMUTs. Combination of a 3-D finite element analysis (FEA) model of the CMUT part and a commercial technology computer aided design (TCAD) simulation of the FET device was used for inspection of the CMUT-FET device performance. In the 3-D FEA simulation, we focused on investigating pull-in voltage and electrical potential of a rectangular CMUT plate which have 20MHz resonant frequency in immersion with different dimensions. The FET part simulation was performed with variation of gate oxide thickness, source/drain doping concentration, channel doping concentration, substrate doping concentration. We combined data and inspected overall device performance with pressure variation at specific gate voltage and optimized the factor above-mentioned to get high sensitivity. Simulation results show that the optimized model has the collapse voltage of 13.4V and the pressure sensitivity of 11.34μA/Pa at gate voltage of 11V.
AB - In this paper, we present design guideline and simulation results of capacitive micromachined ultrasonic transducer (CMUT) embedded field effect transistor (FET) for high frequency mode operation. The CMUT-FET consists of a mechanical CMUT part and an electrical sensing FET part. The device has a characteristic of a shared gate dielectric between a CMUT and an FET; hence, the gate capacitance change in the CMUT part can be reflected to the FET current as pressure changes. With an FET's current amplifying characteristic, the CMUT-FET makes it possible to achieve higher sensitivity and high resonant frequency with smaller element pitch and smaller active cell area than existing CMUTs. Combination of a 3-D finite element analysis (FEA) model of the CMUT part and a commercial technology computer aided design (TCAD) simulation of the FET device was used for inspection of the CMUT-FET device performance. In the 3-D FEA simulation, we focused on investigating pull-in voltage and electrical potential of a rectangular CMUT plate which have 20MHz resonant frequency in immersion with different dimensions. The FET part simulation was performed with variation of gate oxide thickness, source/drain doping concentration, channel doping concentration, substrate doping concentration. We combined data and inspected overall device performance with pressure variation at specific gate voltage and optimized the factor above-mentioned to get high sensitivity. Simulation results show that the optimized model has the collapse voltage of 13.4V and the pressure sensitivity of 11.34μA/Pa at gate voltage of 11V.
KW - 3-D FEA simulation
KW - CMUT
KW - FET
KW - High-frequency
UR - http://www.scopus.com/inward/record.url?scp=84996536331&partnerID=8YFLogxK
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U2 - 10.1109/ULTSYM.2016.7728607
DO - 10.1109/ULTSYM.2016.7728607
M3 - Conference contribution
AN - SCOPUS:84996536331
T3 - IEEE International Ultrasonics Symposium, IUS
BT - 2016 IEEE International Ultrasonics Symposium, IUS 2016
PB - IEEE Computer Society
T2 - 2016 IEEE International Ultrasonics Symposium, IUS 2016
Y2 - 18 September 2016 through 21 September 2016
ER -