Performance and applications of a 100-element HBT grid amplifier

David B. Rutledge, Mconil Kim, Emilio A. Sovero, Michael P. De Lisio, Jonathan B. Hacker, Jung Chih Chiao, Shi Jie Li, David R. Gagnon, James J. Rosenberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution


A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction bipolar transistor (HBT) differential pairs that include a resistive network to provide self-bias to the base. The planar metal grid structure was empirically designed to provide effective coupling between the HBT's and free space. The peak gain of the grid was 10 dB at 10 GHz with a 3 dB bandwidth of 1 GHz. The input and output matches are better than 15 dB at 10 GHz. The maximum output power is 450 mW, and the minimum noise figure is 7dB. Tests show that the grid is quite tolerant of failures-the output power dropped by only ldB when the 10% of the inputs were detuned. The device amplifies beams with incidence angles up to 30° with less than a 3-dB drop in power. By providing external feedback with a twist reflector, the grid amplifier can be used as a broadband tunable source. This source could be tuned from 6.5 GHz to 11.5 GHz with a peak effective radiated power (ERP) of 6.3 W at 9.9 GHz.

Original languageEnglish
Title of host publicationAPMC 1993 - 1993 Asia-Pacific Microwave Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780313526, 9780780313521
Publication statusPublished - 1993
Event1993 Asia-Pacific Microwave Conference, APMC 1993 - Hsinchu, Taiwan, Province of China
Duration: 1993 Oct 181993 Oct 21

Publication series

NameAPMC 1993 - 1993 Asia-Pacific Microwave Conference, Proceedings


Conference1993 Asia-Pacific Microwave Conference, APMC 1993
Country/TerritoryTaiwan, Province of China

Bibliographical note

Publisher Copyright:
© 1993 IEEE.

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation


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